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- Publisher Website: 10.1063/1.346442
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Article: Negative capacitance at metal-semiconductor interfaces
Title | Negative capacitance at metal-semiconductor interfaces |
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Authors | |
Issue Date | 1990 |
Publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp |
Citation | Journal of Applied Physics, 1990, v. 68 n. 6, p. 2845-2848 How to Cite? |
Abstract | A negative capacitance effect has been observed in metal-semiconductor contacts. This phenomenon is explained by considering the loss of interface charge at occupied states below Fermi level due to impact ionization. A modified Shockley-Read treatment is proposed to interpret the experimental observations. In particular, a two-energy-level simplified model is presented to simulate the capacitance spectrum. The results are in good agreement with the experimental data. |
Persistent Identifier | http://hdl.handle.net/10722/155196 |
ISSN | 2023 Impact Factor: 2.7 2023 SCImago Journal Rankings: 0.649 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Wu, X | en_US |
dc.contributor.author | Yang, ES | en_US |
dc.contributor.author | Evans, HL | en_US |
dc.date.accessioned | 2012-08-08T08:32:17Z | - |
dc.date.available | 2012-08-08T08:32:17Z | - |
dc.date.issued | 1990 | en_US |
dc.identifier.citation | Journal of Applied Physics, 1990, v. 68 n. 6, p. 2845-2848 | - |
dc.identifier.issn | 0021-8979 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/155196 | - |
dc.description.abstract | A negative capacitance effect has been observed in metal-semiconductor contacts. This phenomenon is explained by considering the loss of interface charge at occupied states below Fermi level due to impact ionization. A modified Shockley-Read treatment is proposed to interpret the experimental observations. In particular, a two-energy-level simplified model is presented to simulate the capacitance spectrum. The results are in good agreement with the experimental data. | en_US |
dc.language | eng | en_US |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp | en_US |
dc.relation.ispartof | Journal of Applied Physics | en_US |
dc.title | Negative capacitance at metal-semiconductor interfaces | en_US |
dc.type | Article | en_US |
dc.identifier.email | Yang, ES:esyang@hkueee.hku.hk | en_US |
dc.identifier.authority | Yang, ES=rp00199 | en_US |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1063/1.346442 | en_US |
dc.identifier.scopus | eid_2-s2.0-0038025443 | en_US |
dc.identifier.volume | 68 | en_US |
dc.identifier.issue | 6 | en_US |
dc.identifier.spage | 2845 | en_US |
dc.identifier.epage | 2848 | en_US |
dc.identifier.isi | WOS:A1990DY61800045 | - |
dc.publisher.place | United States | en_US |
dc.identifier.scopusauthorid | Wu, X=7407065023 | en_US |
dc.identifier.scopusauthorid | Yang, ES=7202021229 | en_US |
dc.identifier.scopusauthorid | Evans, HL=7401520988 | en_US |
dc.identifier.issnl | 0021-8979 | - |