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Article: Negative capacitance at metal-semiconductor interfaces

TitleNegative capacitance at metal-semiconductor interfaces
Authors
Issue Date1990
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 1990, v. 68 n. 6, p. 2845-2848 How to Cite?
AbstractA negative capacitance effect has been observed in metal-semiconductor contacts. This phenomenon is explained by considering the loss of interface charge at occupied states below Fermi level due to impact ionization. A modified Shockley-Read treatment is proposed to interpret the experimental observations. In particular, a two-energy-level simplified model is presented to simulate the capacitance spectrum. The results are in good agreement with the experimental data.
Persistent Identifierhttp://hdl.handle.net/10722/155196
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorWu, Xen_US
dc.contributor.authorYang, ESen_US
dc.contributor.authorEvans, HLen_US
dc.date.accessioned2012-08-08T08:32:17Z-
dc.date.available2012-08-08T08:32:17Z-
dc.date.issued1990en_US
dc.identifier.citationJournal Of Applied Physics, 1990, v. 68 n. 6, p. 2845-2848en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/155196-
dc.description.abstractA negative capacitance effect has been observed in metal-semiconductor contacts. This phenomenon is explained by considering the loss of interface charge at occupied states below Fermi level due to impact ionization. A modified Shockley-Read treatment is proposed to interpret the experimental observations. In particular, a two-energy-level simplified model is presented to simulate the capacitance spectrum. The results are in good agreement with the experimental data.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleNegative capacitance at metal-semiconductor interfacesen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.346442en_US
dc.identifier.scopuseid_2-s2.0-0038025443en_US
dc.identifier.volume68en_US
dc.identifier.issue6en_US
dc.identifier.spage2845en_US
dc.identifier.epage2848en_US
dc.identifier.isiWOS:A1990DY61800045-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridWu, X=7407065023en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridEvans, HL=7401520988en_US

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