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Article: An improved differential voltage technique for capacitance measurement

TitleAn improved differential voltage technique for capacitance measurement
Authors
Wu, XEvans, HLYang, ES
Issue Date1988
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid State Electronics, 1988, v. 31 n. 2, p. 167-170 How to Cite?
AbstractA differential voltage capacitance technique is described for measuring the capacitance of forward-biased Schottky diodes. This technique is based on the concept of an improved admittance bridge. Difficulties arising from the high conductive component were solved or minimized. Data were obtained for NiSi and PdGaAs Schottky diodes with quality factors as low as 0.001. Compared to accurate phase capacitance spectroscopy and other bridge methods, this technique is more reliable and easier to operate. © 1988.
Persistent Identifierhttp://hdl.handle.net/10722/154876
ISSN
0038-1101
2023 Impact Factor: 1.4
2023 SCImago Journal Rankings: 0.348
ISI Accession Number ID
WOS:A1988M444800007

 

DC FieldValueLanguage
dc.contributor.authorWu, Xen_US
dc.contributor.authorEvans, HLen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:31:00Z-
dc.date.available2012-08-08T08:31:00Z-
dc.date.issued1988en_US
dc.identifier.citationSolid State Electronics, 1988, v. 31 n. 2, p. 167-170en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/10722/154876-
dc.description.abstractA differential voltage capacitance technique is described for measuring the capacitance of forward-biased Schottky diodes. This technique is based on the concept of an improved admittance bridge. Difficulties arising from the high conductive component were solved or minimized. Data were obtained for NiSi and PdGaAs Schottky diodes with quality factors as low as 0.001. Compared to accurate phase capacitance spectroscopy and other bridge methods, this technique is more reliable and easier to operate. © 1988.en_US
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_US
dc.relation.ispartofSolid State Electronicsen_US
dc.titleAn improved differential voltage technique for capacitance measurementen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0023961935en_US
dc.identifier.volume31en_US
dc.identifier.issue2en_US
dc.identifier.spage167en_US
dc.identifier.epage170en_US
dc.identifier.isiWOS:A1988M444800007-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridWu, X=7407065023en_US
dc.identifier.scopusauthoridEvans, HL=7401520988en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.issnl0038-1101-

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