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Article: Reply to "comment on 'negative capacitance at metal-semiconductor interfaces'" [J. Appl. Phys. 70, 1090 (1991)]

TitleReply to "comment on 'negative capacitance at metal-semiconductor interfaces'" [J. Appl. Phys. 70, 1090 (1991)]
Authors
Issue Date1991
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 1991, v. 70 n. 2, p. 1089 How to Cite?
AbstractThe origin of the excess admittance at a forward-biased Schottky diode invokes a controversy among research workers. Werner commented on our papers [J. Appl. Phys. 70, 1090 (1991)], in which he believes that the excess admittance is caused by minority-carrier extraction at defective back contacts rather than charge capture and emission at interface states. This reply answers the questions raised by Werner et al. [Phys. Rev. Lett. 60, 53 (1988)] and points out that the minority-carrier effect cannot account for the experimental observations.
Persistent Identifierhttp://hdl.handle.net/10722/155207
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorWu, Xen_US
dc.contributor.authorEvans, HLen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:32:21Z-
dc.date.available2012-08-08T08:32:21Z-
dc.date.issued1991en_US
dc.identifier.citationJournal Of Applied Physics, 1991, v. 70 n. 2, p. 1089en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/155207-
dc.description.abstractThe origin of the excess admittance at a forward-biased Schottky diode invokes a controversy among research workers. Werner commented on our papers [J. Appl. Phys. 70, 1090 (1991)], in which he believes that the excess admittance is caused by minority-carrier extraction at defective back contacts rather than charge capture and emission at interface states. This reply answers the questions raised by Werner et al. [Phys. Rev. Lett. 60, 53 (1988)] and points out that the minority-carrier effect cannot account for the experimental observations.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleReply to "comment on 'negative capacitance at metal-semiconductor interfaces'" [J. Appl. Phys. 70, 1090 (1991)]en_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.349678en_US
dc.identifier.scopuseid_2-s2.0-0040947124en_US
dc.identifier.volume70en_US
dc.identifier.issue2en_US
dc.identifier.spage1089en_US
dc.identifier.isiWOS:A1991FY34100097-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridWu, X=7407065023en_US
dc.identifier.scopusauthoridEvans, HL=7401520988en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US

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