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Article: Electronic states at silicide-silicon interfaces

TitleElectronic states at silicide-silicon interfaces
Authors
Issue Date1986
PublisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.org
Citation
Physical Review Letters, 1986, v. 56 n. 2, p. 177-180 How to Cite?
AbstractA capacitance-spectroscopy technique based on accurate phase detection has been developed to measure the unoccupied states at silicide-silicon contacts. For Pd and Ni silicides, a dispersed group of states was found to exist in the Si band gap with its peak at a level 0.630.65 eV above the valence-band edge. Silicide formation alters their density and distribution to reflect the changes in the structural perfection and barrier height. Observations on the epitaxial NiSi2-Si(111) interfaces reveal that the characteristics of these states are controlled by the degree of structural perfection of the interface instead of the specific epitaxy. This seems to be the first correlation of the structural and electronic properties of a silicide-silicon interface. © 1986 The American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/155225
ISSN
2015 Impact Factor: 7.645
2015 SCImago Journal Rankings: 3.731
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorHo, PSen_US
dc.contributor.authorYang, ESen_US
dc.contributor.authorEvans, HLen_US
dc.contributor.authorWu, Xen_US
dc.date.accessioned2012-08-08T08:32:26Z-
dc.date.available2012-08-08T08:32:26Z-
dc.date.issued1986en_US
dc.identifier.citationPhysical Review Letters, 1986, v. 56 n. 2, p. 177-180en_US
dc.identifier.issn0031-9007en_US
dc.identifier.urihttp://hdl.handle.net/10722/155225-
dc.description.abstractA capacitance-spectroscopy technique based on accurate phase detection has been developed to measure the unoccupied states at silicide-silicon contacts. For Pd and Ni silicides, a dispersed group of states was found to exist in the Si band gap with its peak at a level 0.630.65 eV above the valence-band edge. Silicide formation alters their density and distribution to reflect the changes in the structural perfection and barrier height. Observations on the epitaxial NiSi2-Si(111) interfaces reveal that the characteristics of these states are controlled by the degree of structural perfection of the interface instead of the specific epitaxy. This seems to be the first correlation of the structural and electronic properties of a silicide-silicon interface. © 1986 The American Physical Society.en_US
dc.languageengen_US
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.orgen_US
dc.relation.ispartofPhysical Review Lettersen_US
dc.titleElectronic states at silicide-silicon interfacesen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1103/PhysRevLett.56.177en_US
dc.identifier.scopuseid_2-s2.0-0343226403en_US
dc.identifier.volume56en_US
dc.identifier.issue2en_US
dc.identifier.spage177en_US
dc.identifier.epage180en_US
dc.identifier.isiWOS:A1986AXK3400021-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridHo, PS=24351761400en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridEvans, HL=7401520988en_US
dc.identifier.scopusauthoridWu, X=7407065023en_US

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