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Article: Heterojunction bipolar transistor with separate carrier injection and confinement

TitleHeterojunction bipolar transistor with separate carrier injection and confinement
Authors
Luo, LFEvans, HLYang, ES
Issue Date1989
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
Ieee Transactions On Electron Devices, 1989, v. 36 n. 9 pt 1, p. 1844-1846 How to Cite?
DOI: http://dx.doi.org/10.1109/16.34252
AbstractA heterojunction bipolar transistor (HBT) structure in which the wide-gap material serves to confine minority carriers only while the injection of carriers into the base is controlled by a homojunction is discussed. This structure offers several advantages over conventional HBTs, including improved electron injection efficiency without bandgap grading. The thickness of the narrow-gap emitter has to be optimized in order to achieve a good confinement effect. The concept can be applied to other HBTs.
Persistent Identifierhttp://hdl.handle.net/10722/154894
ISSN
0018-9383
2023 Impact Factor: 2.9
2023 SCImago Journal Rankings: 0.785
ISI Accession Number ID
WOS:A1989AL12900042

 

DC FieldValueLanguage
dc.contributor.authorLuo, LFen_US
dc.contributor.authorEvans, HLen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:31:04Z-
dc.date.available2012-08-08T08:31:04Z-
dc.date.issued1989en_US
dc.identifier.citationIeee Transactions On Electron Devices, 1989, v. 36 n. 9 pt 1, p. 1844-1846en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://hdl.handle.net/10722/154894-
dc.description.abstractA heterojunction bipolar transistor (HBT) structure in which the wide-gap material serves to confine minority carriers only while the injection of carriers into the base is controlled by a homojunction is discussed. This structure offers several advantages over conventional HBTs, including improved electron injection efficiency without bandgap grading. The thickness of the narrow-gap emitter has to be optimized in order to achieve a good confinement effect. The concept can be applied to other HBTs.en_US
dc.languageengen_US
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16en_US
dc.relation.ispartofIEEE Transactions on Electron Devicesen_US
dc.titleHeterojunction bipolar transistor with separate carrier injection and confinementen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/16.34252en_US
dc.identifier.scopuseid_2-s2.0-0024733314en_US
dc.identifier.volume36en_US
dc.identifier.issue9 pt 1en_US
dc.identifier.spage1844en_US
dc.identifier.epage1846en_US
dc.identifier.isiWOS:A1989AL12900042-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridLuo, LF=22994080200en_US
dc.identifier.scopusauthoridEvans, HL=7401520988en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.issnl0018-9383-

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