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| Title | Author(s) | Issue Date | |
|---|---|---|---|
Improved performance of pentacene OTFTs with HfLaO gate dielectric by using fluorination and nitridation Journal:IEEE Transactions on Device and Materials Reliability | 2012 | ||
Improved performance of low-voltage pentacene OTFTs by incorporating la to hafinium oxide gate dielectric Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010 | 2010 | ||
Effect of annealing time on FePt nanoparticles for magnetic recording Proceeding/Conference:International Symposium on Integrated Functionalities, ISIF 2012 | 2012 | ||
Lower-voltage Pentacene Transistor with Thermal SiO2 as Gate Insulator Proceeding/Conference:Proceedings of RIUPEEEC | 2005 | ||
Effects of NO annealing on the characteristics of GaN MIS capacitor Proceeding/Conference:2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings | 2006 | ||
Modeling the effects of concentration-dependent carrier mobilities and self-heating on the resistance of thermal sensor built on thin silicon on insulator Proceeding/Conference:International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT | 2004 | ||
Gate Leakage Model of Ge MOS Capacitor with High-k Gate Dielectric Proceeding/Conference:Proceedings of 8th ICSICT | 2006 | ||
Improved performance for OTFT with HfTiO2 as gate dielectric by N2O annealing Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC) | 2007 | ||
Enhanced Carrier Mobility for Pentacene TFT by Nitridation of SiO2 Gate Dielectric Proceeding/Conference:Proceedings of RIUPEEEC | 2006 | ||
Reduction of Oxide Charges for GaN MISFET with SiO2 Gate Dielectric through NO Annealing Proceeding/Conference:Proceedings of RIUPEEEC | 2006 | ||
Electrical Characteristics of Ge MOS Capacitor with HfTiON as Gate Dielectric Proceeding/Conference:Proceedings of RIUPEEEC | 2006 | ||
Effects of insulator thickness on the sensing properties of MISiC Schottky-diode hydrogen sensor Proceeding/Conference:Proceedings - 4th IEEE International Symposium on Electronic Design, Test and Applications, DELTA 2008 | 2008 | ||
Modeling of scattering at high-k dielectric/SiO2 interface of strained SiGe MOSFETs Proceeding/Conference:ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings | 2007 | ||
Effects of Annealing on Oxide Thermally Grown on GaN Film as Gate Dielectric Proceeding/Conference:Proceedings of RIUPEEEC | 2005 | ||
Electrical properties of Ba/sub 0.8/Sr/sub 0.2/TiO/sub 3/thin film with NTC effect [thin film resistor] Proceeding/Conference:Proceedings of 7th ICSICT | 2004 | ||
Effects of annealing gas on electrical properties and reliability of Ge MOS capacitors with HfTiON as gate dielectric Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 | 2007 | ||
Effects of post deposited Annealing on Ge MOS capacitors with sub-nanometer EOT HfTiO gate dielectric Proceeding/Conference:IEEE International Conference of Nano/Micro Engineered and Molecular Systems (NEMS) Proceedings | 2008 | ||
Novel Energy-efficient Solid-state White Light Sources Proceeding/Conference:International Conference on Electrical Engineering | 2007 | ||
Effects of gate-insulator nitridation gas on MISiC Schottky-diode hydrogen sensors Proceeding/Conference:2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC | 2006 | ||
Sensing characteristics of a novel MISiC Schottky-diode hydrogen sensor with HfO2 as gate insulator Proceeding/Conference:2007 International Semiconductor Device Research Symposium, ISDRS | 2007 | ||
Light-emitting Diodes with Photonic Crystal Grating Fabricated by Microsphere Lithography Proceeding/Conference:Workshop on Compound Semiconductor Devices and Integrated Circuits | 2008 | ||
A novel technique of N2O-treatment on NH3-nitrided oxide for fabricating gate oxide in nMOSFET's Proceeding/Conference:International Conference on VLSI and CAD Proceedings | 1995 | ||
Fabrication of Microstructures in GaN Light Emitting Diodes by Microsphere Lithography Proceeding/Conference:International Conference on Materials for Advanced Technologies, ICMAT 2007 | 2007 | ||
High Performance White LEDs using Fluorescent Microspheres Proceeding/Conference:International Conference on White LEDs and Solid State Lighting | 2007 | ||
Influence of gate-electrode fringing capacitance on threshold voltage of nano-MOSFET Proceeding/Conference:ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings | 2007 |