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Conference Paper: Electrical Characteristics of Ge MOS Capacitor with HfTiON as Gate Dielectric

TitleElectrical Characteristics of Ge MOS Capacitor with HfTiON as Gate Dielectric
Authors
Zou, XLi, CXu, JPLai, PTChen, WB
Issue Date2006
Citation
Proceedings of RIUPEEEC, p. 90-93 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/99460

 

DC FieldValueLanguage
dc.contributor.authorZou, Xen_HK
dc.contributor.authorLi, Cen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorChen, WBen_HK
dc.date.accessioned2010-09-25T18:31:12Z-
dc.date.available2010-09-25T18:31:12Z-
dc.date.issued2006en_HK
dc.identifier.citationProceedings of RIUPEEEC, p. 90-93en_HK
dc.identifier.urihttp://hdl.handle.net/10722/99460-
dc.languageengen_HK
dc.relation.ispartofProceedings of RIUPEEECen_HK
dc.titleElectrical Characteristics of Ge MOS Capacitor with HfTiON as Gate Dielectricen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailZou, X: xiaozou@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.hkuros135795en_HK
dc.identifier.spage90en_HK
dc.identifier.epage93en_HK

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