Subscribe to this collection to receive daily e-mail notification of new additions

	Title	Author(s)	Issue Date
	Impact of Conduction Current on Output Capacitance Loss in GaN HEMTs Proceeding/Conference:Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC	Song, QihaoZhang, RuizheLi, QiangZhang, Yuhao	2023
	Accelerating the Recovery of p-Gate GaN HEMTs after Overvoltage Stresses Proceeding/Conference:IEEE International Reliability Physics Symposium Proceedings	Kozak, Joseph P.Song, QihaoLiu, JingcunZhang, RuizheLi, QiangSaito, WataruZhang, Yuhao	2022
	MoS<inf>2</inf> Phase-junction-based Schottky Diodes for RF Electronics Proceeding/Conference:IEEE MTT-S International Microwave Symposium Digest	Zhang, XuGrajal, JesúsWang, XiaoxueRadhakrishna, UjwalZhang, YuhaoKong, JingDresselhaus, Mildred S.Palacios, Tomás	2018
	71 GHz-f<inf>max</inf> β-Ga<inf>2</inf>O<inf>3</inf>-on-SiC RF Power MOSFETs with Record P<inf>out</inf>=3.1 W/mm and PAE=50.8% at 2 GHz, P<inf>out</inf>= 2.3 W/mm at 4 GHz, and Low Microwave Noise Figure Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology	Zhou, MinZhou, HongMengwei, S.Gao, GuangjieChen, XiaojinZhu, XiaoxiaoDang, KuiPeijun, M.Xiaohua, M.Zheng, XuefengLiu, ZhihongZhang, JinchengZhang, YuhaoHao, Yue	2024
	Kilovolt, Low-Barrier Ga<inf>2</inf>O<inf>3</inf>JBS diode with Ultra-Low Forward Voltage Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs	Gong, HeheSun, NaHu, TianchengPorter, MatthewYu, XinxinRen, FangfangGu, ShulinZheng, YoudouZhang, RongZhang, YuhaoYe, Jiandong	2024
	Physics-based Compact Model for Multi-channel AlGaN/GaN Schottky Barrier Diodes Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs	Feng, YijingFang, RyanXiao, MingAlant, JohanChong, JessicaWang, HanZhang, YuhaoRadhakrishna, UjwalWei, Lan	2024
	Evaluation of Dynamic R<inf>ON</inf>, Coss Loss, and Short-Circuit Ruggedness of 650V and 1200V Industrial Vertical GaN JFETs Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs	Yang, XinSong, QihaoZhang, RuizheWang, BixuanPidaparthi, SubhashWalker, AndyDrowley, CliffZhang, Yuhao	2024
	Vertical GaN Superjunction Diode on Sapphire with Kilovolt Dynamic Breakdown Voltage Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs	Porter, Matthew A.Ma, YunweiQin, YuanSrijanto, BernadetaBriggs, DayrlKravchenko, IvanZhang, Yuhao	2024
	Exceptional Gate Overvoltage Robustness in P-Gate GaN HEMT with Integrated Circuit Interface Proceeding/Conference:Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC	Wang, BixuanSong, QihaoMukherjee, KalparupaEfthymiou, LoizosPopa, DanielLongobardi, GiorgiaUdrea, FlorinZhang, Yuhao	2024
	Unclamped-inductive-switching Based Output Capacitance Loss Characterization with Extended Test Capability Proceeding/Conference:Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC	Song, QihaoLi, QiangZhang, Yuhao	2024
	Recent Development in 2D and 3D GaN devices for RF and Power Electronics Applications Proceeding/Conference:2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020	Teo, Koon HooChowdhury, NadimZhang, YuhaoPalacios, TomasYamanaka, KojiYamaguchi, Yutaro	2020
	Dynamic breakdown voltage of GaN Power HEMTs Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Zhang, R.Kozak, J. P.Song, Q.Xiao, M.Liu, J.Zhang, Y.	2020
	2 kV, 0.7 mO•cm<sup>2</sup> Vertical Ga<inf>2</inf>O<inf>3</inf> Superjunction Schottky Rectifier with Dynamic Robustness Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Qin, YuanPorter, MatthewXiao, MingDu, ZhonghaoZhang, HongmingMa, YunweiSpencer, JosephWang, BoyanSong, QihaoSasaki, KoheiLin, Chia HungKravchenko, IvanBriggs, Dayrl P.Hensley, Dale K.Tadjer, MarkoWang, HanZhang, Yuhao	2023
	1.1 A/mm ß-Ga<inf>2</inf>O<inf>3</inf>-on-SiC RF MOSFETs with 2.3 W/mm P<inf>out</inf> and 30% PAE at 2 GHz and f<inf>T</inf>/f<inf>max</inf> of 27.6/57 GHz Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Zhou, MinZhou, HongHuang, SenSi, MengweiZhang, YuhaoLuan, TiantianYue, HongqingDang, KuiWang, ChenluLiu, ZhihongZhang, JinchengHao, Yue	2023
	P-Type Doping Control of Magnetron Sputtered NiO for High Voltage UWBG Device Structures Proceeding/Conference:2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023	Porter, Matthew A.Ma, YunweiQin, YuanZhang, Yuhao	2023
	Output Capacitance Loss in Wide-bandgap and Superjunction Power Transistors: Impact of Switching Voltage and Current Proceeding/Conference:2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023	Song, QihaoLi, QiangZhang, Yuhao	2023
	Planar Implantation Edge Termination for Vertical GaN Power Devices Proceeding/Conference:2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023	Wang, YifanXiao, MingPorter, MatthewZhang, RuizheSong, QihaoLu, AlbertYee, NathanWong, Hiu YungZhang, Yuhao	2023
	Gate Lifetime of P-Gate GaN HEMT under DC and Switching Overvoltage Stress Proceeding/Conference:2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023	Wang, BixuanZhang, RuizheSong, QihaoLi, QiangZhang, Yuhao	2023
	Demonstrating the ICeGaN integrated power HEMT approach towards extreme gate robustness Proceeding/Conference:Proceedings of the International Semiconductor Conference, CAS	Mukherjee, K.Efthymiou, L.Ledins, K.Popa, D.Wang, B.Song, Q.Zhang, Y.Longobardi, G.Udrea, F.	2023
	Gate Lifetime of P-Gate GaN HEMT in Inductive Power Switching Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs	Wang, BixuanZhang, RuizheWang, HengyuHe, QuanboSong, QihaoLi, QiangUdrea, FlorinZhang, Yuhao	2023