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Collection's Items (Sorted by Submit Date in Descending order): 1 to 20 of 6940
TitleAuthor(s)Issue Date
Impact of Conduction Current on Output Capacitance Loss in GaN HEMTs
Proceeding/Conference:Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
2023
Accelerating the Recovery of p-Gate GaN HEMTs after Overvoltage Stresses
Proceeding/Conference:IEEE International Reliability Physics Symposium Proceedings
2022
MoS<inf>2</inf> Phase-junction-based Schottky Diodes for RF Electronics
Proceeding/Conference:IEEE MTT-S International Microwave Symposium Digest
2018
2024
Kilovolt, Low-Barrier Ga<inf>2</inf>O<inf>3</inf>JBS diode with Ultra-Low Forward Voltage
Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs
2024
Physics-based Compact Model for Multi-channel AlGaN/GaN Schottky Barrier Diodes
Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs
2024
Evaluation of Dynamic R<inf>ON</inf>, Coss Loss, and Short-Circuit Ruggedness of 650V and 1200V Industrial Vertical GaN JFETs
Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs
2024
Vertical GaN Superjunction Diode on Sapphire with Kilovolt Dynamic Breakdown Voltage
Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs
2024
Exceptional Gate Overvoltage Robustness in P-Gate GaN HEMT with Integrated Circuit Interface
Proceeding/Conference:Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
2024
Unclamped-inductive-switching Based Output Capacitance Loss Characterization with Extended Test Capability
Proceeding/Conference:Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
2024
Recent Development in 2D and 3D GaN devices for RF and Power Electronics Applications
Proceeding/Conference:2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020
2020
Dynamic breakdown voltage of GaN Power HEMTs
Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM
2020
2 kV, 0.7 mO•cm<sup>2</sup> Vertical Ga<inf>2</inf>O<inf>3</inf> Superjunction Schottky Rectifier with Dynamic Robustness
Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM
2023
2023
P-Type Doping Control of Magnetron Sputtered NiO for High Voltage UWBG Device Structures
Proceeding/Conference:2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023
2023
Output Capacitance Loss in Wide-bandgap and Superjunction Power Transistors: Impact of Switching Voltage and Current
Proceeding/Conference:2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023
2023
Planar Implantation Edge Termination for Vertical GaN Power Devices
Proceeding/Conference:2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023
2023
Gate Lifetime of P-Gate GaN HEMT under DC and Switching Overvoltage Stress
Proceeding/Conference:2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023
2023
Demonstrating the ICeGaN integrated power HEMT approach towards extreme gate robustness
Proceeding/Conference:Proceedings of the International Semiconductor Conference, CAS
2023
Gate Lifetime of P-Gate GaN HEMT in Inductive Power Switching
Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs
2023
Collection's Items (Sorted by Submit Date in Descending order): 1 to 20 of 6940