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Collection's Items (Sorted by Submit Date in Descending order): 1 to 20 of 6940
Title | Author(s) | Issue Date | |
---|---|---|---|
Impact of Conduction Current on Output Capacitance Loss in GaN HEMTs Proceeding/Conference:Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC | 2023 | ||
Accelerating the Recovery of p-Gate GaN HEMTs after Overvoltage Stresses Proceeding/Conference:IEEE International Reliability Physics Symposium Proceedings | 2022 | ||
MoS<inf>2</inf> Phase-junction-based Schottky Diodes for RF Electronics Proceeding/Conference:IEEE MTT-S International Microwave Symposium Digest | 2018 | ||
71 GHz-f<inf>max</inf> β-Ga<inf>2</inf>O<inf>3</inf>-on-SiC RF Power MOSFETs with Record P<inf>out</inf>=3.1 W/mm and PAE=50.8% at 2 GHz, P<inf>out</inf>= 2.3 W/mm at 4 GHz, and Low Microwave Noise Figure Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology | 2024 | ||
Kilovolt, Low-Barrier Ga<inf>2</inf>O<inf>3</inf>JBS diode with Ultra-Low Forward Voltage Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs | 2024 | ||
Physics-based Compact Model for Multi-channel AlGaN/GaN Schottky Barrier Diodes Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs | 2024 | ||
Evaluation of Dynamic R<inf>ON</inf>, Coss Loss, and Short-Circuit Ruggedness of 650V and 1200V Industrial Vertical GaN JFETs Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs | 2024 | ||
Vertical GaN Superjunction Diode on Sapphire with Kilovolt Dynamic Breakdown Voltage Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs | 2024 | ||
Exceptional Gate Overvoltage Robustness in P-Gate GaN HEMT with Integrated Circuit Interface Proceeding/Conference:Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC | 2024 | ||
Unclamped-inductive-switching Based Output Capacitance Loss Characterization with Extended Test Capability Proceeding/Conference:Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC | 2024 | ||
Recent Development in 2D and 3D GaN devices for RF and Power Electronics Applications Proceeding/Conference:2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020 | 2020 | ||
Dynamic breakdown voltage of GaN Power HEMTs Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM | 2020 | ||
2 kV, 0.7 mO•cm<sup>2</sup> Vertical Ga<inf>2</inf>O<inf>3</inf> Superjunction Schottky Rectifier with Dynamic Robustness Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM | 2023 | ||
1.1 A/mm ß-Ga<inf>2</inf>O<inf>3</inf>-on-SiC RF MOSFETs with 2.3 W/mm P<inf>out</inf> and 30% PAE at 2 GHz and f<inf>T</inf>/f<inf>max</inf> of 27.6/57 GHz Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM | 2023 | ||
P-Type Doping Control of Magnetron Sputtered NiO for High Voltage UWBG Device Structures Proceeding/Conference:2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023 | 2023 | ||
Output Capacitance Loss in Wide-bandgap and Superjunction Power Transistors: Impact of Switching Voltage and Current Proceeding/Conference:2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023 | 2023 | ||
Planar Implantation Edge Termination for Vertical GaN Power Devices Proceeding/Conference:2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023 | 2023 | ||
Gate Lifetime of P-Gate GaN HEMT under DC and Switching Overvoltage Stress Proceeding/Conference:2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023 | 2023 | ||
Demonstrating the ICeGaN integrated power HEMT approach towards extreme gate robustness Proceeding/Conference:Proceedings of the International Semiconductor Conference, CAS | 2023 | ||
Gate Lifetime of P-Gate GaN HEMT in Inductive Power Switching Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs | 2023 |
Collection's Items (Sorted by Submit Date in Descending order): 1 to 20 of 6940