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Conference Paper: Effects of insulator thickness on the sensing properties of MISiC Schottky-diode hydrogen sensor

TitleEffects of insulator thickness on the sensing properties of MISiC Schottky-diode hydrogen sensor
Authors
Tang, WMLeung, CHLai, PT
Issue Date2008
Citation
Proceedings - 4Th Ieee International Symposium On Electronic Design, Test And Applications, Delta 2008, 2008, p. 171-174 How to Cite?
DOI: http://dx.doi.org/10.1109/DELTA.2008.28
AbstractSilicon dioxide deposited by RF sputtering is used as the gate insulator of Metal-Insulator-SiC (MISiC) Schottky-diode hydrogen sensors. Sensors with different gate insulator thicknesses are fabricated for investigation. Their hydrogen-sensing properties are compared with each other by taking measurements at various temperatures and hydrogen concentrations using a computer-controlled measurement system. Experimental results show that the sensitivity of the devices is strongly related to the thickness of the insulator, and the thicker the insulator, the higher is the sensitivity. © 2008 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/99445
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorTang, WMen_HK
dc.contributor.authorLeung, CHen_HK
dc.contributor.authorLai, PTen_HK
dc.date.accessioned2010-09-25T18:30:32Z-
dc.date.available2010-09-25T18:30:32Z-
dc.date.issued2008en_HK
dc.identifier.citationProceedings - 4Th Ieee International Symposium On Electronic Design, Test And Applications, Delta 2008, 2008, p. 171-174en_HK
dc.identifier.urihttp://hdl.handle.net/10722/99445-
dc.description.abstractSilicon dioxide deposited by RF sputtering is used as the gate insulator of Metal-Insulator-SiC (MISiC) Schottky-diode hydrogen sensors. Sensors with different gate insulator thicknesses are fabricated for investigation. Their hydrogen-sensing properties are compared with each other by taking measurements at various temperatures and hydrogen concentrations using a computer-controlled measurement system. Experimental results show that the sensitivity of the devices is strongly related to the thickness of the insulator, and the thicker the insulator, the higher is the sensitivity. © 2008 IEEE.en_HK
dc.languageengen_HK
dc.relation.ispartofProceedings - 4th IEEE International Symposium on Electronic Design, Test and Applications, DELTA 2008en_HK
dc.titleEffects of insulator thickness on the sensing properties of MISiC Schottky-diode hydrogen sensoren_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLeung, CH:chleung@eee.hku.hken_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityLeung, CH=rp00146en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/DELTA.2008.28en_HK
dc.identifier.scopuseid_2-s2.0-50649096825en_HK
dc.identifier.hkuros150360en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-50649096825&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.spage171en_HK
dc.identifier.epage174en_HK
dc.identifier.scopusauthoridTang, WM=24438163600en_HK
dc.identifier.scopusauthoridLeung, CH=7402612415en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK

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