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Conference Paper: Lower-voltage Pentacene Transistor with Thermal SiO2 as Gate Insulator

TitleLower-voltage Pentacene Transistor with Thermal SiO2 as Gate Insulator
Authors
Issue Date2005
Citation
Regional Inter-University Postgraduate Electrical and Electronic Engineering Conference (RIUPEEEC), Hong Kong, 14-15 July 2005. In Proceedings of RIUPEEEC, 2005, p. 455-458 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/96803

 

DC FieldValueLanguage
dc.contributor.authorLuo, Yen_HK
dc.contributor.authorKwan, MCen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorChe, CMen_HK
dc.date.accessioned2010-09-25T16:45:34Z-
dc.date.available2010-09-25T16:45:34Z-
dc.date.issued2005en_HK
dc.identifier.citationRegional Inter-University Postgraduate Electrical and Electronic Engineering Conference (RIUPEEEC), Hong Kong, 14-15 July 2005. In Proceedings of RIUPEEEC, 2005, p. 455-458en_HK
dc.identifier.urihttp://hdl.handle.net/10722/96803-
dc.languageengen_HK
dc.relation.ispartofProceedings of RIUPEEECen_HK
dc.titleLower-voltage Pentacene Transistor with Thermal SiO2 as Gate Insulatoren_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLuo, Y: mygrapeff@hotmail.comen_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.emailChe, CM: cmche@hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityChe, CM=rp00670en_HK
dc.identifier.hkuros120776en_HK
dc.identifier.spage455en_HK
dc.identifier.epage458en_HK

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