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Conference Paper: Effects of post deposited Annealing on Ge MOS capacitors with sub-nanometer EOT HfTiO gate dielectric

TitleEffects of post deposited Annealing on Ge MOS capacitors with sub-nanometer EOT HfTiO gate dielectric
Authors
Zou, XXu, JLai, PTLi, C
KeywordsAnnealing gas
Ge MOS
HfTiO
Interlayer
Issue Date2008
Citation
The 3rd IEEE International Conference of Nano/Micro Engineered and Molecular Systems (NEMS 2008). In Conference Proceedings, 2008, p. 362-365 How to Cite?
DOI: http://dx.doi.org/10.1109/NEMS.2008.4484352
AbstractPost deposited Annealing of high-permittivity HfTiO gate dielectrics on Ge substrate in different gases (N2, NO and N2O) is investigated, and sub-nanometer equivalent oxide thickness (EOT) HfTiO dielectric has been achieved. Results of Transmission Electron Microscope (TEM), Atomic Force Microscope (AFM) and electrical measurement indicate that wet N2 annealing can greatly suppress the growth of interlayer at the dielectric/Ge substrate interface, while wet NO and N2O annealing reduce equivalent permittivity of dielectric due to the growth of GeON interlayer. © 2008 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/99397
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorZou, Xen_HK
dc.contributor.authorXu, Jen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorLi, Cen_HK
dc.date.accessioned2010-09-25T18:28:22Z-
dc.date.available2010-09-25T18:28:22Z-
dc.date.issued2008en_HK
dc.identifier.citationThe 3rd IEEE International Conference of Nano/Micro Engineered and Molecular Systems (NEMS 2008). In Conference Proceedings, 2008, p. 362-365en_HK
dc.identifier.urihttp://hdl.handle.net/10722/99397-
dc.description.abstractPost deposited Annealing of high-permittivity HfTiO gate dielectrics on Ge substrate in different gases (N2, NO and N2O) is investigated, and sub-nanometer equivalent oxide thickness (EOT) HfTiO dielectric has been achieved. Results of Transmission Electron Microscope (TEM), Atomic Force Microscope (AFM) and electrical measurement indicate that wet N2 annealing can greatly suppress the growth of interlayer at the dielectric/Ge substrate interface, while wet NO and N2O annealing reduce equivalent permittivity of dielectric due to the growth of GeON interlayer. © 2008 IEEE.-
dc.languageengen_HK
dc.relation.ispartofIEEE International Conference of Nano/Micro Engineered and Molecular Systems (NEMS) Proceedingsen_HK
dc.subjectAnnealing gas-
dc.subjectGe MOS-
dc.subjectHfTiO-
dc.subjectInterlayer-
dc.titleEffects of post deposited Annealing on Ge MOS capacitors with sub-nanometer EOT HfTiO gate dielectricen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailZou, X: xiaozou@eee.hku.hken_HK
dc.identifier.emailXu, J: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, J=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/NEMS.2008.4484352-
dc.identifier.scopuseid_2-s2.0-50249095257-
dc.identifier.hkuros150393en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-50249095257&selection=ref&src=s&origin=recordpage-
dc.identifier.spage362en_HK
dc.identifier.epage365en_HK
dc.identifier.scopusauthoridZou, X=23020170400-
dc.identifier.scopusauthoridXu, JP=7407004696-
dc.identifier.scopusauthoridLai, PT=7202946460-
dc.identifier.scopusauthoridLi, CX=22034888200-
dc.customcontrol.immutablesml 160105 - merged-

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