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Conference Paper: Gate Leakage Model of Ge MOS Capacitor with High-k Gate Dielectric

TitleGate Leakage Model of Ge MOS Capacitor with High-k Gate Dielectric
Authors
Zou, XXu, JPLai, PTLi, CZhang, XF
Issue Date2006
Citation
Proceedings of 8th ICSICT, p. 433-435 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/99118

 

DC FieldValueLanguage
dc.contributor.authorZou, Xen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorLi, Cen_HK
dc.contributor.authorZhang, XFen_HK
dc.date.accessioned2010-09-25T18:16:36Z-
dc.date.available2010-09-25T18:16:36Z-
dc.date.issued2006en_HK
dc.identifier.citationProceedings of 8th ICSICT, p. 433-435en_HK
dc.identifier.urihttp://hdl.handle.net/10722/99118-
dc.languageengen_HK
dc.relation.ispartofProceedings of 8th ICSICTen_HK
dc.titleGate Leakage Model of Ge MOS Capacitor with High-k Gate Dielectricen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailZou, X: xiaozou@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.hkuros135799en_HK
dc.identifier.spage433en_HK
dc.identifier.epage435en_HK

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