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Conference Paper: Influence of gate-electrode fringing capacitance on threshold voltage of nano-MOSFET

TitleInfluence of gate-electrode fringing capacitance on threshold voltage of nano-MOSFET
Authors
Ji, FXu, JPLai, PTLi, CX
KeywordsFringing capacitance
MOSFET
Threshold voltage
Issue Date2007
Citation
Icsict-2006: 2006 8Th International Conference On Solid-State And Integrated Circuit Technology, Proceedings, 2007, p. 1318-1320 How to Cite?
DOI: http://dx.doi.org/10.1109/ICSICT.2006.306147
AbstractIn this paper, the gate-electrode fringing capacitance of nano-MOSFET is derived by conformal mapping transformation. Threshold voltage including the fringingcapacitance effect is calculated and good agreement with experimental data is obtained. Factors impacting the threshold behaviors of nano-MOSFET are discussed in detail. © 2006 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/99772
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorJi, Fen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorLi, CXen_HK
dc.date.accessioned2010-09-25T18:43:36Z-
dc.date.available2010-09-25T18:43:36Z-
dc.date.issued2007en_HK
dc.identifier.citationIcsict-2006: 2006 8Th International Conference On Solid-State And Integrated Circuit Technology, Proceedings, 2007, p. 1318-1320en_HK
dc.identifier.urihttp://hdl.handle.net/10722/99772-
dc.description.abstractIn this paper, the gate-electrode fringing capacitance of nano-MOSFET is derived by conformal mapping transformation. Threshold voltage including the fringingcapacitance effect is calculated and good agreement with experimental data is obtained. Factors impacting the threshold behaviors of nano-MOSFET are discussed in detail. © 2006 IEEE.en_HK
dc.languageengen_HK
dc.relation.ispartofICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedingsen_HK
dc.subjectFringing capacitanceen_HK
dc.subjectMOSFETen_HK
dc.subjectThreshold voltageen_HK
dc.titleInfluence of gate-electrode fringing capacitance on threshold voltage of nano-MOSFETen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/ICSICT.2006.306147en_HK
dc.identifier.scopuseid_2-s2.0-34547266572en_HK
dc.identifier.hkuros135800en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-34547266572&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.spage1318en_HK
dc.identifier.epage1320en_HK
dc.identifier.scopusauthoridJi, F=8238553900en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridLi, CX=22034888200en_HK

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