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Browsing "Department of Electrical & Electronic Engineering" by Author zou, x
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Showing results 1 to 19 of 19
Title
Author(s)
Issue Date
Damage-free mica/MoS2 interface for high-performance multilayer MoS2 field-effect transistors
Journal:
Nanotechnology
Zou, X
Xu, J
Liu, L
Wang, H
Lai, PT
Tang, WM
2019
Effects of annealing gas on electrical properties and reliability of Ge MOS capacitors with HfTiON as gate dielectric
Proceeding/Conference:
IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Li, CX
Lai, PT
Xu, JP
Zou, X
2007
Effects of post deposited Annealing on Ge MOS capacitors with sub-nanometer EOT HfTiO gate dielectric
Proceeding/Conference:
IEEE International Conference of Nano/Micro Engineered and Molecular Systems (NEMS) Proceedings
Zou, X
Xu, J
Lai, PT
Li, C
2008
Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric
Journal:
Microelectronics Reliability
Li, CX
Zou, X
Lai, PT
Xu, JP
Chan, CL
2008
Electrical characteristics of Al-doped ZnO-channel thin-film transistor with high-κ HfON/SiO 2 stack gate dielectric
Proceeding/Conference:
2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
Zou, X
Xu, JP
Lai, PT
Li, Y
Ji, F
Deng, LF
2010
Electrical Characteristics of Ge MOS Capacitor with HfTiON as Gate Dielectric
Proceeding/Conference:
Proceedings of RIUPEEEC
Zou, X
Li, C
Xu, JP
Lai, PT
Chen, WB
2006
Electrical properties of HfTiO gate-dielectric metal oxide semiconductor capacitors with NO and N 2O surface nitridations
Proceeding/Conference:
2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
Ji, F
Xu, JP
Li, CX
Lai, PT
Deng, LF
Zou, X
2010
Gate Leakage Model of Ge MOS Capacitor with High-k Gate Dielectric
Proceeding/Conference:
Proceedings of 8th ICSICT
Zou, X
Xu, JP
Lai, PT
Li, C
Zhang, XF
2006
Gate-leakage model of Ge MOS capacitor with high-k gate dielectric
Proceeding/Conference:
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Zou, X
Xu, JP
Lai, PT
Li, CX
Zhang, XF
2007
Improved electrical properties of germanium MOS capacitors with gate dielectric grown in wet-NO ambient
Journal:
IEEE Electron Device Letters
Xu, JP
Lai, PT
Li, CX
Zou, X
Chan, CL
2006
Improved electrical properties of HfTiO/GeO x N y gate dielectric Ge MOS capacitors by using wet-NO Ge-surface pretreatment
Journal:
Applied Physics A: Materials Science and Processing
Xu, JP
Zou, X
Li, CX
Lai, PT
Chan, CL
2009
Improved properties of Ge MOS capacitors with HfTiON or HfTiO gate dielectric by using wet-NO ge-surface pretreatment
Proceeding/Conference:
IEEE Conference on Electron Devices and Solid-State Circuits Proceedings
Li, CX
Zou, X
Xu, JP
Lai, PT
2008
Modeling of scattering at high-k dielectric/SiO2 interface of strained SiGe MOSFETs
Proceeding/Conference:
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Zhang, XF
Xu, JP
Lai, PT
Zou, X
Li, CX
2007
Preparation of high-quality gate dielectrics for Ge MOSFET's in wet ambients
Proceeding/Conference:
Proceedings of the International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2006
Lai, PT
Xu, JP
Li, CX
Zou, X
Chen, WB
2007
Suppressed growth of interlayer GeO x in Ge MOS capacitors with gate dielectric prepared in wet NO ambient
Proceeding/Conference:
IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC) Proceedings
Lai, PT
Li, CX
Xu, JP
Zou, X
Chan, CL
2005
Suppressed growth of unstable low-fr GeOx interlayer in Ge metal-oxide-semiconductor capacitor with high-k gate dielectric by annealing in water vapor
Journal:
Applied Physics Letters
Zou, X
Xu, JP
Li, CX
Lai, PT
2007
Threshold voltage model of SiGe channel pMOSFET without Si cap layer
Proceeding/Conference:
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Zou, X
Li, CX
Xu, JP
Lai, PT
Chen, WB
2006
A threshold-voltage model of SiGe-channel pMOSFET without Si cap layer
Journal:
Microelectronics Reliability
Zou, X
Xu, JP
Li, CX
Lai, PT
Chen, WB
2007
Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness
Journal:
Thin Solid Films
Xu, JP
Zou, X
Lai, PT
Li, CX
Chan, CL
2009