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Conference Paper: Gate-leakage model of Ge MOS capacitor with high-k gate dielectric

TitleGate-leakage model of Ge MOS capacitor with high-k gate dielectric
Authors
Zou, XXu, JPLai, PTLi, CXZhang, XF
KeywordsGate leakage current
Ge MOS
High-κ gate dielectric
Tunneling
Issue Date2007
Citation
Icsict-2006: 2006 8Th International Conference On Solid-State And Integrated Circuit Technology, Proceedings, 2007, p. 433-435 How to Cite?
DOI: http://dx.doi.org/10.1109/ICSICT.2006.306293
AbstractGate-leakage model of n-Ge MOS capacitor with stacked high-k gate dielectric in inversion region is developed based on energy-band analysis and WKB approximation for hole tunneling. The validity of the model is checked for MOSFET with stacked high-κ/interlayer gate dielectric, and simulated results exhibit good agreement with experimental data, indicating the applicability of the model for designing small-sized Ge MOS devices with stacked high-κ gate dielectric. © 2006 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/158469
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorZou, Xen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorLi, CXen_HK
dc.contributor.authorZhang, XFen_HK
dc.date.accessioned2012-08-08T08:59:48Z-
dc.date.available2012-08-08T08:59:48Z-
dc.date.issued2007en_HK
dc.identifier.citationIcsict-2006: 2006 8Th International Conference On Solid-State And Integrated Circuit Technology, Proceedings, 2007, p. 433-435en_US
dc.identifier.urihttp://hdl.handle.net/10722/158469-
dc.description.abstractGate-leakage model of n-Ge MOS capacitor with stacked high-k gate dielectric in inversion region is developed based on energy-band analysis and WKB approximation for hole tunneling. The validity of the model is checked for MOSFET with stacked high-κ/interlayer gate dielectric, and simulated results exhibit good agreement with experimental data, indicating the applicability of the model for designing small-sized Ge MOS devices with stacked high-κ gate dielectric. © 2006 IEEE.en_HK
dc.languageengen_US
dc.relation.ispartofICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedingsen_HK
dc.subjectGate leakage currenten_HK
dc.subjectGe MOSen_HK
dc.subjectHigh-κ gate dielectricen_HK
dc.subjectTunnelingen_HK
dc.titleGate-leakage model of Ge MOS capacitor with high-k gate dielectricen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/ICSICT.2006.306293en_HK
dc.identifier.scopuseid_2-s2.0-34547258533en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-34547258533&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.spage433en_HK
dc.identifier.epage435en_HK
dc.identifier.scopusauthoridZou, X=23020170400en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridLi, CX=22034888200en_HK
dc.identifier.scopusauthoridZhang, XF=14627948200en_HK

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