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- Publisher Website: 10.1109/EDSSC.2005.1635219
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Conference Paper: Suppressed growth of interlayer GeO x in Ge MOS capacitors with gate dielectric prepared in wet NO ambient
Title | Suppressed growth of interlayer GeO x in Ge MOS capacitors with gate dielectric prepared in wet NO ambient |
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Authors | |
Keywords | Computers Circuits |
Issue Date | 2005 |
Publisher | IEEE. |
Citation | The 2005 IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC 2005), Hong Kong, China, 19-21 December 2005. In Conference Proceedings, 2005, p. 115-118 How to Cite? |
Abstract | Wet NO oxidation with wet N 2 anneal is used to grow GeON gate dielectric on Ge substrate. As compared to dry NO oxidation, negligible growth of GeO x interlayer and thus a near-perfect GeON dielectric can be obtained by the wet NO oxidation. As a result, MOS capacitors prepared by this method show greatly reduced interface-state and oxide-charge densities and gate leakage current. This should be attributed to the hydrolysable property of GeO x in water-containing atmosphere. © 2005 IEEE. |
Persistent Identifier | http://hdl.handle.net/10722/45915 |
References |
DC Field | Value | Language |
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dc.contributor.author | Lai, PT | en_HK |
dc.contributor.author | Li, CX | en_HK |
dc.contributor.author | Xu, JP | en_HK |
dc.contributor.author | Zou, X | en_HK |
dc.contributor.author | Chan, CL | en_HK |
dc.date.accessioned | 2007-10-30T06:38:24Z | - |
dc.date.available | 2007-10-30T06:38:24Z | - |
dc.date.issued | 2005 | en_HK |
dc.identifier.citation | The 2005 IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC 2005), Hong Kong, China, 19-21 December 2005. In Conference Proceedings, 2005, p. 115-118 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/45915 | - |
dc.description.abstract | Wet NO oxidation with wet N 2 anneal is used to grow GeON gate dielectric on Ge substrate. As compared to dry NO oxidation, negligible growth of GeO x interlayer and thus a near-perfect GeON dielectric can be obtained by the wet NO oxidation. As a result, MOS capacitors prepared by this method show greatly reduced interface-state and oxide-charge densities and gate leakage current. This should be attributed to the hydrolysable property of GeO x in water-containing atmosphere. © 2005 IEEE. | en_HK |
dc.language | eng | en_HK |
dc.publisher | IEEE. | en_HK |
dc.relation.ispartof | IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC) Proceedings | en_HK |
dc.rights | ©2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. | - |
dc.subject | Computers | en_HK |
dc.subject | Circuits | en_HK |
dc.title | Suppressed growth of interlayer GeO x in Ge MOS capacitors with gate dielectric prepared in wet NO ambient | en_HK |
dc.type | Conference_Paper | en_HK |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | en_HK |
dc.identifier.email | Chan, CL: clchan@eee.hku.hk | - |
dc.identifier.authority | Lai, PT=rp00130 | en_HK |
dc.description.nature | published_or_final_version | en_HK |
dc.identifier.doi | 10.1109/EDSSC.2005.1635219 | en_HK |
dc.identifier.scopus | eid_2-s2.0-43549092239 | en_HK |
dc.identifier.hkuros | 120797 | - |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-43549092239&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.spage | 115 | en_HK |
dc.identifier.epage | 118 | en_HK |
dc.identifier.scopusauthorid | Lai, PT=7202946460 | en_HK |
dc.identifier.scopusauthorid | Li, CX=13906721600 | en_HK |
dc.identifier.scopusauthorid | Xu, JP=35754128700 | en_HK |
dc.identifier.scopusauthorid | Zou, X=23020170400 | en_HK |
dc.identifier.scopusauthorid | Chan, CL=8507083700 | en_HK |