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Conference Paper: Electrical characteristics of Al-doped ZnO-channel thin-film transistor with high-κ HfON/SiO 2 stack gate dielectric

TitleElectrical characteristics of Al-doped ZnO-channel thin-film transistor with high-κ HfON/SiO 2 stack gate dielectric
Authors
Zou, XXu, JPLai, PTLi, YJi, FDeng, LF
KeywordsAl-Doped Zno
Hfon
Saturation Mobility
Thin-Film Transistors
Issue Date2010
Citation
2010 Ieee International Conference Of Electron Devices And Solid-State Circuits, Edssc 2010, 2010 How to Cite?
DOI: http://dx.doi.org/10.1109/EDSSC.2010.5713770
AbstractAl-doped ZnO (AZO) thin film was deposited by radio-frequency reactive sputtering under different Ar/O 2 ratios, and its electrical properties were investigated. The AZO film with relatively low carrier concentration and high Hall mobility was used as the active channel, and bottom-gate top-contact AZO TFTs with high-κ HfON/SiO 2 stack gate dielectric were fabricated. The AZO TFT (W/L = 500/40 μm) showed electrical characteristics with a drain current of 1.9 μA, a saturation mobility of 1.66 cm 2/Vs, a threshold voltage of 2.1 V, a subthreshold swing of 2.7 V/dec, and an on/off current ratio of 5×10 2. Also, the saturation mobility of the AZO TFT with HfON/SiO 2 stacked gate dielectric has been improved by one order of magnitude compared to previous work. © 2010 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/158690
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorZou, Xen_US
dc.contributor.authorXu, JPen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorLi, Yen_US
dc.contributor.authorJi, Fen_US
dc.contributor.authorDeng, LFen_US
dc.date.accessioned2012-08-08T09:00:52Z-
dc.date.available2012-08-08T09:00:52Z-
dc.date.issued2010en_US
dc.identifier.citation2010 Ieee International Conference Of Electron Devices And Solid-State Circuits, Edssc 2010, 2010en_US
dc.identifier.urihttp://hdl.handle.net/10722/158690-
dc.description.abstractAl-doped ZnO (AZO) thin film was deposited by radio-frequency reactive sputtering under different Ar/O 2 ratios, and its electrical properties were investigated. The AZO film with relatively low carrier concentration and high Hall mobility was used as the active channel, and bottom-gate top-contact AZO TFTs with high-κ HfON/SiO 2 stack gate dielectric were fabricated. The AZO TFT (W/L = 500/40 μm) showed electrical characteristics with a drain current of 1.9 μA, a saturation mobility of 1.66 cm 2/Vs, a threshold voltage of 2.1 V, a subthreshold swing of 2.7 V/dec, and an on/off current ratio of 5×10 2. Also, the saturation mobility of the AZO TFT with HfON/SiO 2 stacked gate dielectric has been improved by one order of magnitude compared to previous work. © 2010 IEEE.en_US
dc.languageengen_US
dc.relation.ispartof2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010en_US
dc.subjectAl-Doped Znoen_US
dc.subjectHfonen_US
dc.subjectSaturation Mobilityen_US
dc.subjectThin-Film Transistorsen_US
dc.titleElectrical characteristics of Al-doped ZnO-channel thin-film transistor with high-κ HfON/SiO 2 stack gate dielectricen_US
dc.typeConference_Paperen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/EDSSC.2010.5713770en_US
dc.identifier.scopuseid_2-s2.0-79952503595en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79952503595&selection=ref&src=s&origin=recordpageen_US
dc.identifier.scopusauthoridZou, X=23020170400en_US
dc.identifier.scopusauthoridXu, JP=35754128700en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridLi, Y=37057710200en_US
dc.identifier.scopusauthoridJi, F=8238553900en_US
dc.identifier.scopusauthoridDeng, LF=25936092200en_US

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