Browsing "Faculty of Science" by Author asenov, asen

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Showing results 1 to 19 of 19
TitleAuthor(s)Issue Date
 
3-D statistical simulation comparison of oxide reliability of planar MOSFETs and FinFET
Journal:IEEE Transactions on Electron Devices
Gerrer, LouisAmoroso, Salvatore MariaMarkov, StanislavAdamu-Lema, FikruAsenov, Asen
2013
 
3D dynamic RTN simulation of a 25nm MOSFET: The importance of variability in reliability evaluation of decananometer devices
Proceeding/Conference:2012 15th International Workshop on Computational Electronics, IWCE 2012
Amoroso, Salvatore MariaAdamu-Lema, FikruMarkov, StanislavGerrer, LouisAsenov, Asen
2012
 
Accuracy and issues of the spectroscopic analysis of RTN traps in nanoscale MOSFETs
Journal:IEEE Transactions on Electron Devices
Adamu-Lema, FikruCompagnoni, Christian MonzioAmoroso, Salvatore M.Castellani, NiccolòGerrer, LouisMarkov, StanislavSpinelli, Alessandro S.Lacaita, Andrea L.Asenov, Asen
2013
 
Comprehensive statistical comparison of RTN and BTI in deeply scaled MOSFETs by means of 3D atomistic simulation
Proceeding/Conference:European Solid-State Device Research Conference
Amoroso, Salvatore M.Gerrer, LouisMarkov, StanislavAdamu-Lema, FikruAsenov, Asen
2012
 
Comprehensive study of the statistical variability in a 22 nm fully depleted ultra-thin-body SOI MOSFET
Journal:Solid-State Electronics
Mohd Zain, Anis SuhailaMarkov, StanislavCheng, BinjieAsenov, Asen
2013
 
Direct tunnelling gate leakage variability in Nano-CMOS transistors
Journal:IEEE Transactions on Electron Devices
Markov, StanislavRoy, ScottAsenov, Asen
2010
 
Drain current collapse in nanoscaled bulk MOSFETs due to random dopant compensation in the source/drain extensions
Journal:IEEE Transactions on Electron Devices
Markov, StanislavWang, XingshengMoezi, NeginAsenov, Asen
2011
 
Impact of statistical variability and 3D electrostatics on post-cycling anomalous charge loss in nanoscale Flash memories
Proceeding/Conference:IEEE International Reliability Physics Symposium Proceedings
Amoroso, Salvatore MariaGerrer, LouisAdamu-Lema, FikruMarkov, StanislavAsenov, Asen
2013
 
Multi-scale computational framework for the evaluation of variability in the programing window of a flash cell with molecular storage
Proceeding/Conference:European Solid-State Device Research Conference
Georgiev, Vihar P.Markov, StanislavVilà-Nadal, LaiaBusche, CristophCronin, LeroyAsenov, Asen
2013
 
Optimization and evaluation of variability in the programming window of a flash cell with molecular metal-oxide storage
Journal:IEEE Transactions on Electron Devices
Georgiev, Vihar P.Markov, StanislavVilà-Nadal, LaiaBusche, ChristophCronin, LeroyAsenov, Asen
2014
 
RTN and BTI in nanoscale MOSFETs: A comprehensive statistical simulation study
Journal:Solid-State Electronics
Amoroso, Salvatore MariaGerrer, LouisMarkov, StanislavAdamu-Lema, FikruAsenov, Asen
2013
 
Si-SiO 2 interface band-gap transition - Effects on MOS inversion layer
Proceeding/Conference:Physica Status Solidi (A) Applications and Materials Science
Markov, StanislavSushko, Peter V.Roy, ScottFiegna, ClaudioSangiorgi, EnricoShluger, Alexander L.Asenov, Asen
2008
 
Statistical interactions of multiple oxide traps under BTI stress of nanoscale MOSFETs
Journal:IEEE Electron Device Letters
Markov, StanislavAmoroso, Salvatore MariaGerrer, LouisAdamu-Lema, FikruAsenov, Asen
2013
 
Statistical threshold-voltage variability in scaled decananometer bulk HKMG MOSFETs: A full-scale 3-D simulation scaling study
Journal:IEEE Transactions on Electron Devices
Wang, XingshengBrown, Andrew R.Idris, NizaMarkov, StanislavRoy, GarethAsenov, Asen
2011
 
Statistical variability in fully depleted SOI MOSFETs due to random dopant fluctuations in the source and drain extensions
Journal:IEEE Electron Device Letters
Markov, StanislavCheng, BinjieAsenov, Asen
2012
 
Statistical variability in n-channel UTB-FD-SOI MOSFETs under the influence of RDF, LER, MGG and PBTI
Proceeding/Conference:Proceedings - IEEE International SOI Conference
Markov, StanislavIdris, Niza MohdAsenov, Asen
2011
 
Statistical variability in scaled generations of n-channel UTB-FD-SOI MOSFETs under the influence of RDF, LER, OTF and MGG
Proceeding/Conference:Proceedings - IEEE International SOI Conference
Markov, StanislavZain, Anis Suhaila MohdCheng, BinjieAsenov, Asen
2012
 
Three-dimensional statistical simulation of gate leakage fluctuations due to combined interface roughness and random dopants
Journal:Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Markov, StanislavBrown, Andrew R.Cheng, BinjieRoy, GarethRoy, ScottAsenov, Asen
2007
 
Towards polyoxometalate-cluster-based nano-electronics
Journal:Chemistry - A European Journal
Vilà-Nadal, LaiaMitchell, Scott G.Markov, StanislavBusche, ChristophGeorgiev, ViharAsenov, AsenCronin, Leroy
2013
Showing results 1 to 19 of 19