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- Publisher Website: 10.1109/TED.2011.2152845
- Scopus: eid_2-s2.0-79960837761
- WOS: WOS:000293708500023
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Article: Drain current collapse in nanoscaled bulk MOSFETs due to random dopant compensation in the source/drain extensions
Title | Drain current collapse in nanoscaled bulk MOSFETs due to random dopant compensation in the source/drain extensions |
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Authors | |
Keywords | statistical variability Drain current collapse random dopant fluctuations (RDFs) |
Issue Date | 2011 |
Citation | IEEE Transactions on Electron Devices, 2011, v. 58, n. 8, p. 2385-2393 How to Cite? |
Abstract | We reveal a new statistical variability phenomenon in bulk n-channel metal-oxide-semiconductor field-effect transistors scaled down to 18-nm physical gate length. Rare but dramatic on-current degradation is observed in 3-D simulations of large ensembles of transistors that are subject to random dopant fluctuations. Physically, it originates from the random compensation of donors (from the source or drain extension) and acceptors (from halo implants) around the access regions to the channel, leading to mobile charge starvation, dramatic increase in the access resistance, and corresponding current collapse. The estimated frequency of occurrence of the phenomenon is higher than one in a hundred for a square device and higher than 10-4 for two-times-wider devices, as demonstrated by simulations of 10000-device ensembles. © 2010 IEEE. |
Persistent Identifier | http://hdl.handle.net/10722/221317 |
ISSN | 2023 Impact Factor: 2.9 2023 SCImago Journal Rankings: 0.785 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Markov, Stanislav | - |
dc.contributor.author | Wang, Xingsheng | - |
dc.contributor.author | Moezi, Negin | - |
dc.contributor.author | Asenov, Asen | - |
dc.date.accessioned | 2015-11-18T06:08:59Z | - |
dc.date.available | 2015-11-18T06:08:59Z | - |
dc.date.issued | 2011 | - |
dc.identifier.citation | IEEE Transactions on Electron Devices, 2011, v. 58, n. 8, p. 2385-2393 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10722/221317 | - |
dc.description.abstract | We reveal a new statistical variability phenomenon in bulk n-channel metal-oxide-semiconductor field-effect transistors scaled down to 18-nm physical gate length. Rare but dramatic on-current degradation is observed in 3-D simulations of large ensembles of transistors that are subject to random dopant fluctuations. Physically, it originates from the random compensation of donors (from the source or drain extension) and acceptors (from halo implants) around the access regions to the channel, leading to mobile charge starvation, dramatic increase in the access resistance, and corresponding current collapse. The estimated frequency of occurrence of the phenomenon is higher than one in a hundred for a square device and higher than 10-4 for two-times-wider devices, as demonstrated by simulations of 10000-device ensembles. © 2010 IEEE. | - |
dc.language | eng | - |
dc.relation.ispartof | IEEE Transactions on Electron Devices | - |
dc.subject | statistical variability | - |
dc.subject | Drain current collapse | - |
dc.subject | random dopant fluctuations (RDFs) | - |
dc.title | Drain current collapse in nanoscaled bulk MOSFETs due to random dopant compensation in the source/drain extensions | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/TED.2011.2152845 | - |
dc.identifier.scopus | eid_2-s2.0-79960837761 | - |
dc.identifier.volume | 58 | - |
dc.identifier.issue | 8 | - |
dc.identifier.spage | 2385 | - |
dc.identifier.epage | 2393 | - |
dc.identifier.isi | WOS:000293708500023 | - |
dc.identifier.issnl | 0018-9383 | - |