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Conference Paper: 3D dynamic RTN simulation of a 25nm MOSFET: The importance of variability in reliability evaluation of decananometer devices

Title3D dynamic RTN simulation of a 25nm MOSFET: The importance of variability in reliability evaluation of decananometer devices
Authors
Amoroso, Salvatore MariaAdamu-Lema, FikruMarkov, StanislavGerrer, LouisAsenov, Asen
KeywordsRandom dopants
device simulation
charge trapping
statistical variability
RTN
reliability
Issue Date2012
Citation
2012 15th International Workshop on Computational Electronics, IWCE 2012, 2012 How to Cite?
DOI: http://dx.doi.org/10.1109/IWCE.2012.6242823
AbstractIn this work we present a 3D dynamic simulation analysis for the reliability evaluation of a decananometer MOSFET device. We have focused our attention on the Random Telegraph Noise (RTN) phenomenon, showing that the statistical variability induced by the discrete nature of matter and charge has a fundamental impact on the reliability performance of nanoscale devices, in both transient and steady-state operating regimes. © 2012 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/221320

 

DC FieldValueLanguage
dc.contributor.authorAmoroso, Salvatore Maria-
dc.contributor.authorAdamu-Lema, Fikru-
dc.contributor.authorMarkov, Stanislav-
dc.contributor.authorGerrer, Louis-
dc.contributor.authorAsenov, Asen-
dc.date.accessioned2015-11-18T06:08:59Z-
dc.date.available2015-11-18T06:08:59Z-
dc.date.issued2012-
dc.identifier.citation2012 15th International Workshop on Computational Electronics, IWCE 2012, 2012-
dc.identifier.urihttp://hdl.handle.net/10722/221320-
dc.description.abstractIn this work we present a 3D dynamic simulation analysis for the reliability evaluation of a decananometer MOSFET device. We have focused our attention on the Random Telegraph Noise (RTN) phenomenon, showing that the statistical variability induced by the discrete nature of matter and charge has a fundamental impact on the reliability performance of nanoscale devices, in both transient and steady-state operating regimes. © 2012 IEEE.-
dc.languageeng-
dc.relation.ispartof2012 15th International Workshop on Computational Electronics, IWCE 2012-
dc.subjectRandom dopants-
dc.subjectdevice simulation-
dc.subjectcharge trapping-
dc.subjectstatistical variability-
dc.subjectRTN-
dc.subjectreliability-
dc.title3D dynamic RTN simulation of a 25nm MOSFET: The importance of variability in reliability evaluation of decananometer devices-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/IWCE.2012.6242823-
dc.identifier.scopuseid_2-s2.0-84866539072-

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