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Article: Towards polyoxometalate-cluster-based nano-electronics

TitleTowards polyoxometalate-cluster-based nano-electronics
Authors
Vilà-Nadal, LaiaMitchell, Scott G.Markov, StanislavBusche, ChristophGeorgiev, ViharAsenov, AsenCronin, Leroy
Keywordspolyoxometalates
nanoelectronics
nanosystems
redox-active systems
Issue Date2013
Citation
Chemistry - A European Journal, 2013, v. 19, n. 49, p. 16502-16511 How to Cite?
DOI: http://dx.doi.org/10.1002/chem.201301631
AbstractWe explore the concept that the incorporation of polyoxometalates (POMs) into complementary metal oxide semiconductor (CMOS) technologies could offer a fundamentally better way to design and engineer new types of data storage devices, due to the enhanced electronic complementarity with SiO2, high redox potentials, and multiple redox states accessible to polyoxometalate clusters. To explore this we constructed a custom-built simulation domain bridge. Connecting DFT, for the quantum mechanical modelling part, and mesoscopic device modelling, confirms the theoretical basis for the proposed advantages of POMs in non-volatile molecular memories (NVMM) or flash-RAM. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Persistent Identifierhttp://hdl.handle.net/10722/221352
ISSN
0947-6539
2023 Impact Factor: 3.9
2023 SCImago Journal Rankings: 1.058
ISI Accession Number ID
WOS:000327404700002

 

DC FieldValueLanguage
dc.contributor.authorVilà-Nadal, Laia-
dc.contributor.authorMitchell, Scott G.-
dc.contributor.authorMarkov, Stanislav-
dc.contributor.authorBusche, Christoph-
dc.contributor.authorGeorgiev, Vihar-
dc.contributor.authorAsenov, Asen-
dc.contributor.authorCronin, Leroy-
dc.date.accessioned2015-11-18T06:09:05Z-
dc.date.available2015-11-18T06:09:05Z-
dc.date.issued2013-
dc.identifier.citationChemistry - A European Journal, 2013, v. 19, n. 49, p. 16502-16511-
dc.identifier.issn0947-6539-
dc.identifier.urihttp://hdl.handle.net/10722/221352-
dc.description.abstractWe explore the concept that the incorporation of polyoxometalates (POMs) into complementary metal oxide semiconductor (CMOS) technologies could offer a fundamentally better way to design and engineer new types of data storage devices, due to the enhanced electronic complementarity with SiO2, high redox potentials, and multiple redox states accessible to polyoxometalate clusters. To explore this we constructed a custom-built simulation domain bridge. Connecting DFT, for the quantum mechanical modelling part, and mesoscopic device modelling, confirms the theoretical basis for the proposed advantages of POMs in non-volatile molecular memories (NVMM) or flash-RAM. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.-
dc.languageeng-
dc.relation.ispartofChemistry - A European Journal-
dc.subjectpolyoxometalates-
dc.subjectnanoelectronics-
dc.subjectnanosystems-
dc.subjectredox-active systems-
dc.titleTowards polyoxometalate-cluster-based nano-electronics-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/chem.201301631-
dc.identifier.pmid24281797-
dc.identifier.scopuseid_2-s2.0-84889682509-
dc.identifier.hkuros235075-
dc.identifier.volume19-
dc.identifier.issue49-
dc.identifier.spage16502-
dc.identifier.epage16511-
dc.identifier.eissn1521-3765-
dc.identifier.isiWOS:000327404700002-
dc.identifier.issnl0947-6539-

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