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Article: Statistical interactions of multiple oxide traps under BTI stress of nanoscale MOSFETs
Title | Statistical interactions of multiple oxide traps under BTI stress of nanoscale MOSFETs |
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Authors | |
Keywords | variability Bias and temperature instability (BTI) complimentary metal-oxide-semiconductor (CMOS) random telegraph noise (RTN) reliability |
Issue Date | 2013 |
Citation | IEEE Electron Device Letters, 2013, v. 34, n. 5, p. 686-688 How to Cite? |
Abstract | We report a thorough 3-D simulation study of the correlation between multiple, trapped charges in the gate oxide of nanoscale bulk MOSFETs under bias and temperature instability (BTI). The role of complex electrostatic interactions between the trapped charges in the presence of random dopant fluctuations is evaluated, and their impact on the distribution of the threshold voltage shift and on the distribution of the number of trapped charges is analyzed. The results justify the assumptions of a Poisson distribution of the BTI-induced trapped charges and of the lack of correlation between them, when accounting for time-dependent variability in circuits. © 1980-2012 IEEE. |
Persistent Identifier | http://hdl.handle.net/10722/221391 |
ISSN | 2023 Impact Factor: 4.1 2023 SCImago Journal Rankings: 1.250 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Markov, Stanislav | - |
dc.contributor.author | Amoroso, Salvatore Maria | - |
dc.contributor.author | Gerrer, Louis | - |
dc.contributor.author | Adamu-Lema, Fikru | - |
dc.contributor.author | Asenov, Asen | - |
dc.date.accessioned | 2015-11-18T06:09:11Z | - |
dc.date.available | 2015-11-18T06:09:11Z | - |
dc.date.issued | 2013 | - |
dc.identifier.citation | IEEE Electron Device Letters, 2013, v. 34, n. 5, p. 686-688 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10722/221391 | - |
dc.description.abstract | We report a thorough 3-D simulation study of the correlation between multiple, trapped charges in the gate oxide of nanoscale bulk MOSFETs under bias and temperature instability (BTI). The role of complex electrostatic interactions between the trapped charges in the presence of random dopant fluctuations is evaluated, and their impact on the distribution of the threshold voltage shift and on the distribution of the number of trapped charges is analyzed. The results justify the assumptions of a Poisson distribution of the BTI-induced trapped charges and of the lack of correlation between them, when accounting for time-dependent variability in circuits. © 1980-2012 IEEE. | - |
dc.language | eng | - |
dc.relation.ispartof | IEEE Electron Device Letters | - |
dc.subject | variability | - |
dc.subject | Bias and temperature instability (BTI) | - |
dc.subject | complimentary metal-oxide-semiconductor (CMOS) | - |
dc.subject | random telegraph noise (RTN) | - |
dc.subject | reliability | - |
dc.title | Statistical interactions of multiple oxide traps under BTI stress of nanoscale MOSFETs | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/LED.2013.2253541 | - |
dc.identifier.scopus | eid_2-s2.0-84877004955 | - |
dc.identifier.hkuros | 219004 | - |
dc.identifier.volume | 34 | - |
dc.identifier.issue | 5 | - |
dc.identifier.spage | 686 | - |
dc.identifier.epage | 688 | - |
dc.identifier.isi | WOS:000318433400038 | - |
dc.identifier.issnl | 0741-3106 | - |