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Article: Comprehensive study of the statistical variability in a 22 nm fully depleted ultra-thin-body SOI MOSFET

TitleComprehensive study of the statistical variability in a 22 nm fully depleted ultra-thin-body SOI MOSFET
Authors
Mohd Zain, Anis SuhailaMarkov, StanislavCheng, BinjieAsenov, Asen
KeywordsWork-function-variability
Line-edge-roughness
Random dopant fluctuations
Silicon-on-insulator
Issue Date2013
Citation
Solid-State Electronics, 2013, v. 90, p. 51-55 How to Cite?
DOI: http://dx.doi.org/10.1016/j.sse.2013.02.052
AbstractA comprehensive study of statistical variability (SV) in scaled, fully-depleted (FD) SOI n-channel MOSFET with a physical gate length of 22 nm is reported. The impact of random discrete dopant (RDF), line edge roughness (LER) and metal gate granularity (MGG) on threshold voltage (VTH), drain-induced-barrier-lowering (DIBL) and on-current (Ion) are analyzed both individually and combined together. Results indicate that although MGG is the dominated variability source in the FD-SOI transistor, RDF has critical impact on the on-current variability. Moreover, the combination of RDF and LER can still dramatically modulate short channel effect behavior in the transistor. © 2013 Elsevier Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/221331
ISSN
0038-1101
2023 Impact Factor: 1.4
2023 SCImago Journal Rankings: 0.348
ISI Accession Number ID
WOS:000327676800010

 

DC FieldValueLanguage
dc.contributor.authorMohd Zain, Anis Suhaila-
dc.contributor.authorMarkov, Stanislav-
dc.contributor.authorCheng, Binjie-
dc.contributor.authorAsenov, Asen-
dc.date.accessioned2015-11-18T06:09:01Z-
dc.date.available2015-11-18T06:09:01Z-
dc.date.issued2013-
dc.identifier.citationSolid-State Electronics, 2013, v. 90, p. 51-55-
dc.identifier.issn0038-1101-
dc.identifier.urihttp://hdl.handle.net/10722/221331-
dc.description.abstractA comprehensive study of statistical variability (SV) in scaled, fully-depleted (FD) SOI n-channel MOSFET with a physical gate length of 22 nm is reported. The impact of random discrete dopant (RDF), line edge roughness (LER) and metal gate granularity (MGG) on threshold voltage (VTH), drain-induced-barrier-lowering (DIBL) and on-current (Ion) are analyzed both individually and combined together. Results indicate that although MGG is the dominated variability source in the FD-SOI transistor, RDF has critical impact on the on-current variability. Moreover, the combination of RDF and LER can still dramatically modulate short channel effect behavior in the transistor. © 2013 Elsevier Ltd. All rights reserved.-
dc.languageeng-
dc.relation.ispartofSolid-State Electronics-
dc.subjectWork-function-variability-
dc.subjectLine-edge-roughness-
dc.subjectRandom dopant fluctuations-
dc.subjectSilicon-on-insulator-
dc.titleComprehensive study of the statistical variability in a 22 nm fully depleted ultra-thin-body SOI MOSFET-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.sse.2013.02.052-
dc.identifier.scopuseid_2-s2.0-84887475446-
dc.identifier.hkuros248645-
dc.identifier.volume90-
dc.identifier.spage51-
dc.identifier.epage55-
dc.identifier.isiWOS:000327676800010-
dc.identifier.issnl0038-1101-

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