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Article: Three-dimensional statistical simulation of gate leakage fluctuations due to combined interface roughness and random dopants
Title | Three-dimensional statistical simulation of gate leakage fluctuations due to combined interface roughness and random dopants |
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Authors | |
Keywords | 3D modelling and simulation Oxide thickness variation MOSFET Interface roughness Gate leakage fluctuations Direct tunnelling Random dopant |
Issue Date | 2007 |
Citation | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2007, v. 46, n. 4 B, p. 2112-2116 How to Cite? |
Abstract | A three-dimensional simulation methodology allowing statistical study of the direct tunnelling gate current fluctuations in realistic nano-scale metal-oxide-semiconductor field effect transistors (MPSFETs) is presented. The approach has been applied to study the gate leakage fluctuations due to the combined effect of oxide thickness variation (OTV) and discrete random dopants (RD) in an example 25 nm gate length MPSFET. OTV is the primary source of gate leakage fluctuations at high gate voltage, while RD are the main factor at high drain voltage. Both OTV and RD contribute to an average increase in the magnitude of the gate leakage with respect to that of a uniform device. This reflects the exponential sensitivity of the direct tunnelling current. ©2007 The Japan Society of Applied Physics. |
Persistent Identifier | http://hdl.handle.net/10722/221310 |
ISSN | 2023 Impact Factor: 1.5 2023 SCImago Journal Rankings: 0.307 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Markov, Stanislav | - |
dc.contributor.author | Brown, Andrew R. | - |
dc.contributor.author | Cheng, Binjie | - |
dc.contributor.author | Roy, Gareth | - |
dc.contributor.author | Roy, Scott | - |
dc.contributor.author | Asenov, Asen | - |
dc.date.accessioned | 2015-11-18T06:08:57Z | - |
dc.date.available | 2015-11-18T06:08:57Z | - |
dc.date.issued | 2007 | - |
dc.identifier.citation | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2007, v. 46, n. 4 B, p. 2112-2116 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10722/221310 | - |
dc.description.abstract | A three-dimensional simulation methodology allowing statistical study of the direct tunnelling gate current fluctuations in realistic nano-scale metal-oxide-semiconductor field effect transistors (MPSFETs) is presented. The approach has been applied to study the gate leakage fluctuations due to the combined effect of oxide thickness variation (OTV) and discrete random dopants (RD) in an example 25 nm gate length MPSFET. OTV is the primary source of gate leakage fluctuations at high gate voltage, while RD are the main factor at high drain voltage. Both OTV and RD contribute to an average increase in the magnitude of the gate leakage with respect to that of a uniform device. This reflects the exponential sensitivity of the direct tunnelling current. ©2007 The Japan Society of Applied Physics. | - |
dc.language | eng | - |
dc.relation.ispartof | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | - |
dc.subject | 3D modelling and simulation | - |
dc.subject | Oxide thickness variation | - |
dc.subject | MOSFET | - |
dc.subject | Interface roughness | - |
dc.subject | Gate leakage fluctuations | - |
dc.subject | Direct tunnelling | - |
dc.subject | Random dopant | - |
dc.title | Three-dimensional statistical simulation of gate leakage fluctuations due to combined interface roughness and random dopants | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1143/JJAP.46.2112 | - |
dc.identifier.scopus | eid_2-s2.0-34547889184 | - |
dc.identifier.volume | 46 | - |
dc.identifier.issue | 4 B | - |
dc.identifier.spage | 2112 | - |
dc.identifier.epage | 2116 | - |
dc.identifier.eissn | 1347-4065 | - |
dc.identifier.isi | WOS:000247050200059 | - |
dc.identifier.issnl | 0021-4922 | - |