| Title | Author(s) | Year | View Count |  | Single domain Bi2Se3 films grown on InP(111)A by molecular-beam epitaxy | Guo, X; Xu, Z; Liu, HC; Zhao, B; Dai, XQ; He, HT; Wang, JN; Liu, H; Ho, WK; Xie, MH | 2013 | 27 |
 | First-principle study of magnetism induced by vacancies in graphene | Dai, XQ; Zhao, JH; Xie, MH; Tang, YN; Li, YH; Zhao, B | 2011 | 204 |
| The effect of Cu on O adsorption on a ZnO(0001) surface: A first-principles study | Dai, XQ; Yan, HJ; Wang, JL; Liu, YM; Yang, Z; Xie, MH | 2008 | 157 |
 | Structural properties of oxygen on InN(0001) surface | Dai, XQ; Wang, JL; Yan, HJ; Wu, XH; Xie, MH | 2007 | 99 |
| Structural properties of oxygen on InN(0 0 0 1) surface | Dai, XQ; Wang, JL; Yan, HJ; Wu, XH; Xie, MH | 2007 | 36 |
| Current transport property of n-GaN/n-6H-SiC heterojunction: Influence of interface states | Huang, Y; Chen, XD; Fung, S; Beling, CD; Ling, CC; Dai, XQ; Xie, MH | 2005 | 565 |
| In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy | Cao, YG; Xu, SH; Lü, W; Dai, XQ; Chan, YF; Wang, N; Liu, Y; Wu, HS; Xie, MH; Tong, SY | 2005 | 668 |
| First-principles study of indium on silicon (100) – the structure, defects and interdiffusion | Dai, XQ; Ju, WW; Wang, GT; Xie, MH | 2004 | 142 |
| Nitrogen Adatom Diffusion on a Ga-Rich GaN (0001) Surface | Dai, XQ; Wu, HS; Xie, MH; Xu, SH; Tong, SY | 2004 | 148 |
| Atomic design of polarity of GaN films grown on SiC(0001) | Dai, XQ; Wu, HS; Xu, SH; Xie, MH; Tong, SY | 2004 | 177 |
| A model for GaN 'ghost' islands | Xie, MH; Zheng, LX; Dai, XQ; Wu, HS; Tong, SY | 2004 | 137 |
| First-principles study of indium on silicon (1 0 0) - The structure, defects and interdiffusion | Dai, XQ; Ju, WW; Wang, GT; Xie, MH | 2004 | 33 |
| Structural properties of GaN films grown on the 6H-SiC(0001) (√3 × √3)R30° substrate | Dai, XQ; Wu, HS; Xu, SH; Xie, MH; Tong, SY | 2004 | 49 |
| Shallow optically active structural defect in wurtzite GaN epilayers grown on stepped 4H-SiC substrates | Xu, SJ; Wang, HJ; Cheung, SH; Li, Q; Dai, XQ; Xie, MH; Tong, SY | 2003 | 376 |
| Direct observation of a Ga adlayer on a GaN(0001) surface by LEED Patterson inversion | Xu, SH; Wu, H; Dai, XQ; Lau, WP; Zheng, LX; Xie, MH; Tong, SY | 2003 | 412 |
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