Results 1 to 13 of 13
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TypeTitleAuthor(s)YearViews
Single domain Bi2Se3 films grown on InP(111)A by molecular-beam epitaxy
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Guo, X; Xu, Z; Liu, HC; Zhao, B; Dai, XQ; He, HT; Wang, JN; Liu, H; Ho, WK; Xie, MH2013213
 
First-principle study of magnetism induced by vacancies in graphene
Journal:
European Physical Journal B
Publisher:
Springer Verlag. The Journal's web site is located at http://www.edpsciences.org/journal/index.cfm?edpsname=epjb
Dai, XQ; Zhao, JH; Xie, MH; Tang, YN; Li, YH; Zhao, B2011282
 
The effect of Cu on O adsorption on a ZnO(0001) surface: A first-principles study
Journal:
Journal of Physics Condensed Matter
Publisher:
Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpcm
Dai, XQ; Yan, HJ; Wang, JL; Liu, YM; Yang, Z; Xie, MH2008169
 
Structural properties of oxygen on InN(0 0 0 1) surface
Journal:
Surface Science
Publisher:
Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/susc
Dai, XQ; Wang, JL; Yan, HJ; Wu, XH; Xie, MH2007103
 
In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy
Journal:
Physical Review B - Condensed Matter and Materials Physics
Publisher:
American Physical Society. The Journal's web site is located at http://prb.aps.org/
Cao, YG; Xu, SH; Lü, W; Dai, XQ; Chan, YF; Wang, N; Liu, Y; Wu, HS; Xie, MH; Tong, SY2005680
 
Current transport property of n-GaN/n-6H-SiC heterojunction: Influence of interface states
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Huang, Y; Chen, XD; Fung, S; Beling, CD; Ling, CC; Dai, XQ; Xie, MH2005620
 
First-principles study of indium on silicon (1 0 0) - The structure, defects and interdiffusion
Journal:
Surface Science
Publisher:
Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/susc
Dai, XQ; Ju, WW; Wang, GT; Xie, MH200487
 
A model for GaN 'ghost' islands
Journal:
Surface Science
Publisher:
Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/susc
Xie, MH; Zheng, LX; Dai, XQ; Wu, HS; Tong, SY2004159
 
Atomic design of polarity of GaN films grown on SiC(0001)
Journal:
Communications in Theoretical Physics
Publisher:
Chinese Academy of Sciences, Institute of Theoretical Physics. The Journal's web site is located at http://ctp.itp.cn
Dai, XQ; Wu, HS; Xu, SH; Xie, MH; Tong, SY2004225
 
Structural properties of GaN films grown on the 6H-SiC(0001) (√3 × √3)R30° substrate
Journal:
Surface Review and Letters
Publisher:
World Scientific Publishing Co Pte Ltd. The Journal's web site is located at http://www.worldscinet.com/srl/srl.shtml
Dai, XQ; Wu, HS; Xu, SH; Xie, MH; Tong, SY2004108
 
Nitrogen Adatom Diffusion on a Ga-Rich GaN (0001) Surface
Journal:
Chinese Physics Letters
Publisher:
Zhongguo Wuli Xuehui & Institute of Physics Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/CPL
Dai, XQ; Wu, HS; Xie, MH; Xu, SH; Tong, SY2004197
 
Shallow optically active structural defect in wurtzite GaN epilayers grown on stepped 4H-SiC substrates
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Xu, SJ; Wang, HJ; Cheung, SH; Li, Q; Dai, XQ; Xie, MH; Tong, SY2003367
 
Direct observation of a Ga adlayer on a GaN(0001) surface by LEED Patterson inversion
Journal:
Physical Review B - Condensed Matter and Materials Physics
Publisher:
American Physical Society. The Journal's web site is located at http://prb.aps.org/
Xu, SH; Wu, H; Dai, XQ; Lau, WP; Zheng, LX; Xie, MH; Tong, SY2003445
 
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