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Article: Strain in epitaxial high-index Bi2Se3(221) films grown by molecular-beam epitaxy

TitleStrain in epitaxial high-index Bi2Se3(221) films grown by molecular-beam epitaxy
Authors
Li, BChen, WGGuo, XHo, WKDai, XQJia, JFXie, MH
KeywordsHigh-index Bi2Se3
Strain
Topological insulator
Heterostructure
Molecular-beam epitaxy
Issue Date2017
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apsusc
Citation
Applied Surface Science, 2017, v. 396, p. 1825-1830 How to Cite?
DOI: http://dx.doi.org/10.1016/j.apsusc.2016.11.189
AbstractHigh-index Bi2Se3(221) film has been grown on In2Se3-buffered GaAs(001), in which a much retarded strain relaxation dynamics is recorded. The slow strain-relaxation process of in epitaxial Bi2Se3(221) can be attributed to the layered structure of Bi2Se3 crystal, where the epifilm grown along [221] is like a pile of weakly-coupled quintuple layer slabs stacked side-by-side on substrate. Finally, we reveal strong chemical bonding at the interface of Bi2Se3 and In2Se3 by plotting differential charge contour calculated by first-principle method. This study points to the feasibility of achieving strained TIs for manipulating the properties of topological systems.
Persistent Identifierhttp://hdl.handle.net/10722/237782
ISSN
0169-4332
2021 Impact Factor: 7.392
2020 SCImago Journal Rankings: 1.295
ISI Accession Number ID
WOS:000391418200075

 

DC FieldValueLanguage
dc.contributor.authorLi, B-
dc.contributor.authorChen, WG-
dc.contributor.authorGuo, X-
dc.contributor.authorHo, WK-
dc.contributor.authorDai, XQ-
dc.contributor.authorJia, JF-
dc.contributor.authorXie, MH-
dc.date.accessioned2017-01-20T02:28:36Z-
dc.date.available2017-01-20T02:28:36Z-
dc.date.issued2017-
dc.identifier.citationApplied Surface Science, 2017, v. 396, p. 1825-1830-
dc.identifier.issn0169-4332-
dc.identifier.urihttp://hdl.handle.net/10722/237782-
dc.description.abstractHigh-index Bi2Se3(221) film has been grown on In2Se3-buffered GaAs(001), in which a much retarded strain relaxation dynamics is recorded. The slow strain-relaxation process of in epitaxial Bi2Se3(221) can be attributed to the layered structure of Bi2Se3 crystal, where the epifilm grown along [221] is like a pile of weakly-coupled quintuple layer slabs stacked side-by-side on substrate. Finally, we reveal strong chemical bonding at the interface of Bi2Se3 and In2Se3 by plotting differential charge contour calculated by first-principle method. This study points to the feasibility of achieving strained TIs for manipulating the properties of topological systems.-
dc.languageeng-
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apsusc-
dc.relation.ispartofApplied Surface Science-
dc.subjectHigh-index Bi2Se3-
dc.subjectStrain-
dc.subjectTopological insulator-
dc.subjectHeterostructure-
dc.subjectMolecular-beam epitaxy-
dc.titleStrain in epitaxial high-index Bi2Se3(221) films grown by molecular-beam epitaxy-
dc.typeArticle-
dc.identifier.emailLi, B: silasph@hku.hk-
dc.identifier.emailHo, WK: howk@hku.hk-
dc.identifier.emailXie, MH: mhxie@hku.hk-
dc.identifier.authorityXie, MH=rp00818-
dc.description.naturepreprint-
dc.identifier.doi10.1016/j.apsusc.2016.11.189-
dc.identifier.scopuseid_2-s2.0-85006699800-
dc.identifier.hkuros270969-
dc.identifier.volume396-
dc.identifier.spage1825-
dc.identifier.epage1830-
dc.identifier.isiWOS:000391418200075-
dc.publisher.placeNetherlands-
dc.identifier.issnl0169-4332-

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