File Download
 
Links for fulltext
(May Require Subscription)
 
Supplementary

Article: Nitrogen Adatom Diffusion on a Ga-Rich GaN (0001) Surface
  • Basic View
  • Metadata View
  • XML View
TitleNitrogen Adatom Diffusion on a Ga-Rich GaN (0001) Surface
 
AuthorsDai, XQ1 3
Wu, HS1
Xie, MH1
Xu, SH1
Tong, SY2
 
Issue Date2004
 
PublisherZhongguo Wuli Xuehui & Institute of Physics Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/CPL
 
CitationChinese Physics Letters, 2004, v. 21 n. 3, p. 527-529 [How to Cite?]
DOI: http://dx.doi.org/10.1088/0256-307X/21/3/031
 
AbstractThe diffusion of N adatoms on a Ga-rich GaN(0001) surface has been studied using density-functional theory. The configuration of Ga adatoms on a Ga-rich GaN surface has been identified. The first adlayer Ga adatoms are on top of the terminating substrate Ga atoms, and the outmost adlayer Ga adatoms exist randomly at the T 4 or H 3 sites. A very different diffusivity of N adatoms on a Ga-rich GaN(0001) surface has been found. The excess Ga adatoms on a GaN(0001) surface reduce the diffusion barrier by 0.75eV and influence the migration path. It seems that bilayer Ga adatoms are helpful for N atom diffusion.
 
ISSN0256-307X
2013 Impact Factor: 0.924
 
DOIhttp://dx.doi.org/10.1088/0256-307X/21/3/031
 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorDai, XQ
 
dc.contributor.authorWu, HS
 
dc.contributor.authorXie, MH
 
dc.contributor.authorXu, SH
 
dc.contributor.authorTong, SY
 
dc.date.accessioned2010-09-06T08:06:51Z
 
dc.date.available2010-09-06T08:06:51Z
 
dc.date.issued2004
 
dc.description.abstractThe diffusion of N adatoms on a Ga-rich GaN(0001) surface has been studied using density-functional theory. The configuration of Ga adatoms on a Ga-rich GaN surface has been identified. The first adlayer Ga adatoms are on top of the terminating substrate Ga atoms, and the outmost adlayer Ga adatoms exist randomly at the T 4 or H 3 sites. A very different diffusivity of N adatoms on a Ga-rich GaN(0001) surface has been found. The excess Ga adatoms on a GaN(0001) surface reduce the diffusion barrier by 0.75eV and influence the migration path. It seems that bilayer Ga adatoms are helpful for N atom diffusion.
 
dc.description.natureLink_to_subscribed_fulltext
 
dc.identifier.citationChinese Physics Letters, 2004, v. 21 n. 3, p. 527-529 [How to Cite?]
DOI: http://dx.doi.org/10.1088/0256-307X/21/3/031
 
dc.identifier.doihttp://dx.doi.org/10.1088/0256-307X/21/3/031
 
dc.identifier.epage529
 
dc.identifier.hkuros92625
 
dc.identifier.issn0256-307X
2013 Impact Factor: 0.924
 
dc.identifier.issue3
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-1642391852
 
dc.identifier.spage527
 
dc.identifier.urihttp://hdl.handle.net/10722/80474
 
dc.identifier.volume21
 
dc.languageeng
 
dc.publisherZhongguo Wuli Xuehui & Institute of Physics Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/CPL
 
dc.publisher.placeChina
 
dc.relation.ispartofChinese Physics Letters
 
dc.relation.referencesReferences in Scopus
 
dc.titleNitrogen Adatom Diffusion on a Ga-Rich GaN (0001) Surface
 
dc.typeArticle
 
<?xml encoding="utf-8" version="1.0"?>
<item><contributor.author>Dai, XQ</contributor.author>
<contributor.author>Wu, HS</contributor.author>
<contributor.author>Xie, MH</contributor.author>
<contributor.author>Xu, SH</contributor.author>
<contributor.author>Tong, SY</contributor.author>
<date.accessioned>2010-09-06T08:06:51Z</date.accessioned>
<date.available>2010-09-06T08:06:51Z</date.available>
<date.issued>2004</date.issued>
<identifier.citation>Chinese Physics Letters, 2004, v. 21 n. 3, p. 527-529</identifier.citation>
<identifier.issn>0256-307X</identifier.issn>
<identifier.uri>http://hdl.handle.net/10722/80474</identifier.uri>
<description.abstract>The diffusion of N adatoms on a Ga-rich GaN(0001) surface has been studied using density-functional theory. The configuration of Ga adatoms on a Ga-rich GaN surface has been identified. The first adlayer Ga adatoms are on top of the terminating substrate Ga atoms, and the outmost adlayer Ga adatoms exist randomly at the T 4 or H 3 sites. A very different diffusivity of N adatoms on a Ga-rich GaN(0001) surface has been found. The excess Ga adatoms on a GaN(0001) surface reduce the diffusion barrier by 0.75eV and influence the migration path. It seems that bilayer Ga adatoms are helpful for N atom diffusion.</description.abstract>
<language>eng</language>
<publisher>Zhongguo Wuli Xuehui &amp; Institute of Physics Publishing Ltd. The Journal&apos;s web site is located at http://www.iop.org/EJ/journal/CPL</publisher>
<relation.ispartof>Chinese Physics Letters</relation.ispartof>
<title>Nitrogen Adatom Diffusion on a Ga-Rich GaN (0001) Surface</title>
<type>Article</type>
<identifier.openurl>http://library.hku.hk:4550/resserv?sid=HKU:IR&amp;issn=0256-307X&amp;volume=21&amp;spage=527&amp;epage=529&amp;date=2004&amp;atitle=Nitrogen+adatom+diffusion+on+a+Ga-rich+GaN+(0001)+surface</identifier.openurl>
<description.nature>Link_to_subscribed_fulltext</description.nature>
<identifier.doi>10.1088/0256-307X/21/3/031</identifier.doi>
<identifier.scopus>eid_2-s2.0-1642391852</identifier.scopus>
<identifier.hkuros>92625</identifier.hkuros>
<relation.references>http://www.scopus.com/mlt/select.url?eid=2-s2.0-1642391852&amp;selection=ref&amp;src=s&amp;origin=recordpage</relation.references>
<identifier.volume>21</identifier.volume>
<identifier.issue>3</identifier.issue>
<identifier.spage>527</identifier.spage>
<identifier.epage>529</identifier.epage>
<publisher.place>China</publisher.place>
</item>
Author Affiliations
  1. The University of Hong Kong
  2. City University of Hong Kong
  3. Henan Normal University