Article: Nitrogen Adatom Diffusion on a Ga-Rich GaN (0001) Surface

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TitleNitrogen Adatom Diffusion on a Ga-Rich GaN (0001) Surface
AuthorsDai, XQ1 3
Wu, HS1
Xie, MH1
Xu, SH1
Tong, SY2
Issue Date2004
PublisherZhongguo Wuli Xuehui & Institute of Physics Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/CPL
CitationChinese Physics Letters, 2004, v. 21 n. 3, p. 527-529 [How to Cite?]
DOI: http://dx.doi.org/10.1088/0256-307X/21/3/031
AbstractThe diffusion of N adatoms on a Ga-rich GaN(0001) surface has been studied using density-functional theory. The configuration of Ga adatoms on a Ga-rich GaN surface has been identified. The first adlayer Ga adatoms are on top of the terminating substrate Ga atoms, and the outmost adlayer Ga adatoms exist randomly at the T 4 or H 3 sites. A very different diffusivity of N adatoms on a Ga-rich GaN(0001) surface has been found. The excess Ga adatoms on a GaN(0001) surface reduce the diffusion barrier by 0.75eV and influence the migration path. It seems that bilayer Ga adatoms are helpful for N atom diffusion.
ISSN0256-307X
2011 Impact Factor: 0.731
2011 SCImago Journal Rankings: 0.083
DOIhttp://dx.doi.org/10.1088/0256-307X/21/3/031
ReferencesReferences in Scopus
DC Field
Value
dc.contributor.authorDai, XQ
dc.contributor.authorWu, HS
dc.contributor.authorXie, MH
dc.contributor.authorXu, SH
dc.contributor.authorTong, SY
dc.date.accessioned2010-09-06T08:06:51Z
dc.date.available2010-09-06T08:06:51Z
dc.date.issued2004
dc.description.abstractThe diffusion of N adatoms on a Ga-rich GaN(0001) surface has been studied using density-functional theory. The configuration of Ga adatoms on a Ga-rich GaN surface has been identified. The first adlayer Ga adatoms are on top of the terminating substrate Ga atoms, and the outmost adlayer Ga adatoms exist randomly at the T 4 or H 3 sites. A very different diffusivity of N adatoms on a Ga-rich GaN(0001) surface has been found. The excess Ga adatoms on a GaN(0001) surface reduce the diffusion barrier by 0.75eV and influence the migration path. It seems that bilayer Ga adatoms are helpful for N atom diffusion.
dc.description.natureLink_to_subscribed_fulltext
dc.identifier.citationChinese Physics Letters, 2004, v. 21 n. 3, p. 527-529 [How to Cite?]
DOI: http://dx.doi.org/10.1088/0256-307X/21/3/031
dc.identifier.doihttp://dx.doi.org/10.1088/0256-307X/21/3/031
dc.identifier.epage529
dc.identifier.hkuros92625
dc.identifier.issn0256-307X
2011 Impact Factor: 0.731
2011 SCImago Journal Rankings: 0.083
dc.identifier.issue3
dc.identifier.openurl
dc.identifier.scopuseid_2-s2.0-1642391852
dc.identifier.spage527
dc.identifier.urihttp://hdl.handle.net/10722/80474
dc.identifier.volume21
dc.languageeng
dc.publisherZhongguo Wuli Xuehui & Institute of Physics Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/CPL
dc.publisher.placeChina
dc.relation.ispartofChinese Physics Letters
dc.relation.referencesReferences in Scopus
dc.titleNitrogen Adatom Diffusion on a Ga-Rich GaN (0001) Surface
dc.typeArticle
Author Affiliations
  1. The University of Hong Kong
  2. City University of Hong Kong
  3. Henan Normal University