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TitleAuthor(s)Issue Date
 
2021
 
2019
Effects of annealing gas on electrical properties and reliability of Ge MOS capacitors with HfTiON as gate dielectric
Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
2007
Effects of post deposited Annealing on Ge MOS capacitors with sub-nanometer EOT HfTiO gate dielectric
Proceeding/Conference:IEEE International Conference of Nano/Micro Engineered and Molecular Systems (NEMS) Proceedings
2008
 
2008
Electrical characteristics of Al-doped ZnO-channel thin-film transistor with high-κ HfON/SiO 2 stack gate dielectric
Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
2010
 
2006
Electrical properties of HfTiO gate-dielectric metal oxide semiconductor capacitors with NO and N 2O surface nitridations
Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
2010
 
2021
 
Gate Leakage Model of Ge MOS Capacitor with High-k Gate Dielectric
Proceeding/Conference:Proceedings of 8th ICSICT
2006
Gate-leakage model of Ge MOS capacitor with high-k gate dielectric
Proceeding/Conference:ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
2007
 
2006
 
2009
 
Improved properties of Ge MOS capacitors with HfTiON or HfTiO gate dielectric by using wet-NO ge-surface pretreatment
Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits Proceedings
2008
 
2020
Modeling of scattering at high-k dielectric/SiO2 interface of strained SiGe MOSFETs
Proceeding/Conference:ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
2007
 
2021
Preparation of high-quality gate dielectrics for Ge MOSFET's in wet ambients
Proceeding/Conference:Proceedings of the International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2006
2007
 
2021
 
2022