Browsing by Author JI, F

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TitleAuthor(s)Issue DateViews
 
2D threshold-voltage model for high-k gate-dielectric MOSFETs
Journal:Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Ji, FXu, JLai, PTChen, WLi, Y
2006
173
 
A 2-D analytical threshold-voltage model for GeOI/GeON MOSFET with high-k gate dielectric
Journal:Microelectronics Reliability
JI, FXU, JPLIU, LTANG, WMLai, PT
2016
39
 
A compact threshold-voltage model of MOSFETs with stack high-k gate dielectric
Proceeding/Conference:2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Ji, FXu, JPChen, JJXu, HXLi, CXLai, PT
2009
198
 
Comparative study of high-K HfLaON and HfON as charge-storage layer of MONOS memory
Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
Liu, LXu, JPHuang, XDJi, FLai, PT
2010
165
 
Cost-effectiveness of universal screening for chronic hepatitis B virus infection in China: an economic evaluation
Journal:The Lancet Global Health
Su, SWong, WCWZou, ZCheng, DDOng, JJChan, PJi, FYuen, MFZhuang, GSeto, WKZhang, L
2022
43
 
Electrical characteristics of Al-doped ZnO-channel thin-film transistor with high-κ HfON/SiO 2 stack gate dielectric
Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
Zou, XXu, JPLai, PTLi, YJi, FDeng, LF
2010
133
 
Electrical properties of HfTiO gate-dielectric metal oxide semiconductor capacitors with NO and N 2O surface nitridations
Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
Ji, FXu, JPLi, CXLai, PTDeng, LFZou, X
2010
134
 
Electrical properties of HfTiON gate-dielectric metal-oxide-semiconductor capacitors with different Si-surface nitridations
Journal:Applied Physics Letters
Ji, FXu, JPLai, PTLi, CXGuan, JG
2007
197
 
A fringing-capacitance model for deep-submicron MOSFET with high-k gate dielectric
Journal:Microelectronics Reliability
Ji, FXu, JPLai, PTGuan, JG
2008
176
 
Impacts of Ti content and annealing temperature on electrical properties of Si MOS capacitors with HfTiON gate dielectric
Proceeding/Conference:2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Ji, FXu, JPLi, CXLai, PTChan, CL
2009
210
 
Improved Charge-Trapping Properties of TiON/HfON Dual Charge Storage Layer by Tapered Band Structure
Journal:Applied Physics Letters
Liu, LXu, JChen, JXJi, FLai, PT
2012
53
 
Improved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayer
Journal:Applied Physics Letters
Xu, JPJi, FLi, CXLai, PTGuan, JGLiu, YR
2007
116
 
Improved interface properties of Ge metal-oxide-semiconductor capacitor with TaTiO gate dielectric by using in situ TaON passivation interlayer
Journal:Applied Physics Letters
Ji, FXu, JPLiu, JGLi, CXLai, PT
2011
206
 
Improved interfacial properties of Ge MOS capacitor with high-k dielectric by using TaON/GeON dual interlayer
Journal:IEEE Electron Device Letters
Ji, FXu, JPLai, PTLi, CXLiu, JG
2011
200
 
Improved Memory Characteristics by NH3-Nitrided GdO as Charge Storage Layer for Nonvolatile Memory Applications
Journal:Applied Physics Letters
Liu, LXu, JJi, FChen, JXLai, PT
2012
73
 
Improved Memory Window of MONOS Memory Capacitor with GdON as Charge Storage Layer
Proceeding/Conference:I E E E Conference on Electron Devices and Solid-State Circuits Proceedings
Liu, LXu, JChen, JXJi, FHUANG, XLai, PT
2012
60
 
Influence of gate-electrode fringing capacitance on threshold voltage of nano-MOSFET
Proceeding/Conference:ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Ji, FXu, JPLai, PTLi, CX
2007
246
 
Influence of natridation annealing of HfTiO on electrical properties of MOS device
Journal:Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics
Ji, FXu, JZhang, HLai, PLi, CGuan, J
2008
128
 
Influence of sidewall spacer on threshold voltage of MOSFET with high-k gate dielectric
Journal:Microelectronics Reliability
Xu, JPJi, FLai, PTGuan, JG
2008
227
 
A novel MONOS memory with high-κ HfLaON as charge-storage layer
Journal:IEEE Transactions on Device and Materials Reliability
Liu, LXu, JPJi, FHuang, XDLai, PT
2011
185
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