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Browsing by Author Xu, JP
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Showing results 26 to 45 of 58
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Title
Author(s)
Issue Date
Impact of Nitrogen Incorporation on the Interface Between Ge and La2O3 or Y2O3 Gate Dielectric: A Study on the Formation of Germanate
Journal:
IEEE Transactions on Electron Devices
Cheng, ZX
Liu, L
Xu, JP
Huang, Y
Lai, PT
Tang, WM
2016
Impacts of Ti incorporation on the electrical properties and reliability of GaAs metal-oxide-semiconductor capacitors with high-k NdTiON as gate dielectric
Proceeding/Conference:
IEEE Semiconductor Interface Specialists Conference
Liu, LN
Choi, HW
Xu, JP
Lai, PT
2016
Improved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate Dielectric
Journal:
IEEE Transactions on Electron Devices
Wen, M
Xu, JP
Liu, L
Lai, PT
Tang, WM
2017
Improved Electrical Properties and Reliability of GaAs Metal–Oxide–Semiconductor Capacitor by Using LaAlON Passivation Layer
Journal:
Physica Status Solidi - Rapid Research Letters
LIU, L
Choi, HW
Xu, JP
Lai, PT
2017
Improved electrical properties of GaAs MOS capacitor by using HfLaON passivation layer
Proceeding/Conference:
IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
Liu, LN
Choi, HW
Lai, PT
Xu, JP
2016
Improved electrical properties of MoS2 transistor with Hf1-xTixO as gate dielectric
Proceeding/Conference:
IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
Zhao, X
Xu, JP
Liu, L
Lai, PT
Tang, WM
2019
Improved I-V characteristics of SiC MOSFETs by TCE thermal gate oxidation
Proceeding/Conference:
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Yang, BL
Lin, LM
Xu, JP
Lai, PT
2006
Improved interface properties of Ge metal-oxide-semiconductor capacitor with TaTiO gate dielectric by using in situ TaON passivation interlayer
Journal:
Applied Physics Letters
Ji, F
Xu, JP
Liu, JG
Li, CX
Lai, PT
2011
Improved Interfacial and Electrical Properties of GaAs Metal–Oxide–Semiconductor Capacitor by Using Fluorine-Plasma-Treated Interfacial Passivation Layer
Journal:
IEEE Transactions on Device and Materials Reliability
Lu, HH
Xu, JP
Liu, L
Lai, PT
Tang, WM
2017
Improved Interfacial and Electrical Properties of GaAs MOS Capacitor With LaON/TiON Multilayer Composite Gate Dielectric and LaON as Interfacial Passivation Layer
Journal:
IEEE Transactions on Electron Devices
Lu, HH
Liu, L
Xu, JP
Lai, PT
Tang, WM
2017
Improved interfacial and electrical properties of Ge MOS capacitor by using TaON/LaON dual passivation interlayer
Journal:
Applied Physics Letters
Cheng, ZX
Xu, JP
Liu, L
Huang, Y
Lai, PT
Tang, WM
2016
Improved interfacial and electrical properties of Ge MOS capacitor with ZrON/TaON multilayer composite gate dielectric by using fluorinated Si passivation layer
Journal:
Applied Physics Letters
HUANG, Y
XU, JP
LIU, L
CHENG, ZX
Lai, PT
TANG, WM
2017
Improved interfacial and electrical properties of HfLaON gate dielectric Ge MOS capacitor by NbON/Si dual passivation layer and fluorine incorporation
Journal:
Applied Physics Letters
Huang, Y
Xu, JP
Liu, L
Lai, PT
Tang, WM
2016
Improved interfacial and electrical properties of HfTiON gate-dielectric Ge MOS capacitor by using LaON/Si dual passivation layer and fluorine-plasma treatment
Journal:
Applied Surface Science
Huang, Y
Xu, JP
Liu, L
Cheng, ZX
Lai, PT
Tang, WM
2019
Improved Interfacial and Electrical Properties of MoS2 Transistor With High/Low-Temperature Grown Hf0.5Al0.5O as Top-Gate Dielectric
Journal:
IEEE Electron Device Letters
Zhao, XY
Xu, JP
Liu, L
Lai, PT
Tang, WM
2020
Improved interfacial properties of Ge MOS capacitor with high-k dielectric by using TaON/GeON dual interlayer
Journal:
IEEE Electron Device Letters
Ji, F
Xu, JP
Lai, PT
Li, CX
Liu, JG
2011
Improved interfacial properties of SiO2 grown on 6H-SiC in diluted NO
Journal:
Applied Physics A: Materials Science and Processing
Lai, PT
Xu, JP
Li, CX
Chan, CL
2005
Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH 3 -plasma treated yittrium-oxynitride as interfacial passivation layer
Journal:
Microelectronics Reliability
Lu, HH
Xu, JP
Liu, L
Wang, LS
Lai, PT
Tang, WM
2016
Improved performance of low-voltage pentacene OTFTs by incorporating la to hafinium oxide gate dielectric
Proceeding/Conference:
2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
Deng, LF
Lai, PT
Tao, QB
Choi, HW
Xu, JP
Chen, WB
Che, CM
Liu, YR
2010
Improved performance of pentacene OTFT with HfLaO gate dielectric by annealing in NH 3
Proceeding/Conference:
ECS Transactions
Deng, LF
Lai, PT
Xu, JP
Choi, HW
Chen, WB
Che, CM
2010
