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Article: Improved Electrical Properties and Reliability of GaAs Metal–Oxide–Semiconductor Capacitor by Using LaAlON Passivation Layer

TitleImproved Electrical Properties and Reliability of GaAs Metal–Oxide–Semiconductor Capacitor by Using LaAlON Passivation Layer
Authors
LIU, LChoi, HWXu, JPLai, PT
KeywordsGaAs
interface states
LaAlON
metal–oxide–semiconductor structures
passivation
thin films
Issue Date2017
PublisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1862-6270
Citation
Physica Status Solidi - Rapid Research Letters, 2017, v. 11, p. 1700180 How to Cite?
DOI: http://dx.doi.org/10.1002/pssr.201700180
Persistent Identifierhttp://hdl.handle.net/10722/249634
ISSN
1862-6254
2023 Impact Factor: 2.5
2023 SCImago Journal Rankings: 0.655
ISI Accession Number ID
WOS:000410132200006

 

DC FieldValueLanguage
dc.contributor.authorLIU, L-
dc.contributor.authorChoi, HW-
dc.contributor.authorXu, JP-
dc.contributor.authorLai, PT-
dc.date.accessioned2017-11-21T03:04:55Z-
dc.date.available2017-11-21T03:04:55Z-
dc.date.issued2017-
dc.identifier.citationPhysica Status Solidi - Rapid Research Letters, 2017, v. 11, p. 1700180-
dc.identifier.issn1862-6254-
dc.identifier.urihttp://hdl.handle.net/10722/249634-
dc.languageeng-
dc.publisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1862-6270-
dc.relation.ispartofPhysica Status Solidi - Rapid Research Letters-
dc.rightspostprint: This is the accepted version of the following article: FULL CITE, which has been published in final form at [Link to final article]. Preprint This is the pre-peer reviewed version of the following article: FULL CITE, which has been published in final form at [Link to final article].-
dc.subjectGaAs-
dc.subjectinterface states-
dc.subjectLaAlON-
dc.subjectmetal–oxide–semiconductor structures-
dc.subjectpassivation-
dc.subjectthin films-
dc.titleImproved Electrical Properties and Reliability of GaAs Metal–Oxide–Semiconductor Capacitor by Using LaAlON Passivation Layer-
dc.typeArticle-
dc.identifier.emailChoi, HW: hwchoi@hku.hk-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityChoi, HW=rp00108-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1002/pssr.201700180-
dc.identifier.scopuseid_2-s2.0-85029046503-
dc.identifier.hkuros283026-
dc.identifier.volume11-
dc.identifier.spage1700180-
dc.identifier.epage1700180-
dc.identifier.isiWOS:000410132200006-
dc.publisher.placeGermany-
dc.identifier.issnl1862-6254-

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