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Conference Paper: Improved electrical properties of GaAs MOS capacitor by using HfLaON passivation layer

TitleImproved electrical properties of GaAs MOS capacitor by using HfLaON passivation layer
Authors
Liu, LNChoi, HWLai, PTXu, JP
KeywordsGaAs MOS
HfLaON passivation layer
interface state density
Issue Date2016
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853
Citation
2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, China, 3-5 August 2016, p. 350-353 How to Cite?
DOI: http://dx.doi.org/10.1109/EDSSC.2016.7785280
Persistent Identifierhttp://hdl.handle.net/10722/247819

 

DC FieldValueLanguage
dc.contributor.authorLiu, LN-
dc.contributor.authorChoi, HW-
dc.contributor.authorLai, PT-
dc.contributor.authorXu, JP-
dc.date.accessioned2017-10-18T08:33:09Z-
dc.date.available2017-10-18T08:33:09Z-
dc.date.issued2016-
dc.identifier.citation2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, China, 3-5 August 2016, p. 350-353-
dc.identifier.urihttp://hdl.handle.net/10722/247819-
dc.languageeng-
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853-
dc.relation.ispartofIEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)-
dc.rightsIEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). Copyright © IEEE.-
dc.rights©2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.-
dc.subjectGaAs MOS-
dc.subjectHfLaON passivation layer-
dc.subjectinterface state density-
dc.titleImproved electrical properties of GaAs MOS capacitor by using HfLaON passivation layer-
dc.typeConference_Paper-
dc.identifier.emailChoi, HW: hwchoi@hku.hk-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityChoi, HW=rp00108-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1109/EDSSC.2016.7785280-
dc.identifier.scopuseid_2-s2.0-85010540230-
dc.identifier.hkuros280929-
dc.identifier.spage350-
dc.identifier.epage353-
dc.publisher.placeUnited States-

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