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Conference Paper: Impacts of Ti incorporation on the electrical properties and reliability of GaAs metal-oxide-semiconductor capacitors with high-k NdTiON as gate dielectric

TitleImpacts of Ti incorporation on the electrical properties and reliability of GaAs metal-oxide-semiconductor capacitors with high-k NdTiON as gate dielectric
Authors
Liu, LNChoi, HWXu, JPLai, PT
Issue Date2016
Citation
The 47th IEEE Semiconductor Interface Specialists Conference, San Diego, CA, USA, 7-10 December 2016 How to Cite?
DescriptionSession 11 - Poster Preview Session 4 – Si, High-k, Wide Bandgap Interfaces : no. 11.24
Persistent Identifierhttp://hdl.handle.net/10722/247824

 

DC FieldValueLanguage
dc.contributor.authorLiu, LN-
dc.contributor.authorChoi, HW-
dc.contributor.authorXu, JP-
dc.contributor.authorLai, PT-
dc.date.accessioned2017-10-18T08:33:14Z-
dc.date.available2017-10-18T08:33:14Z-
dc.date.issued2016-
dc.identifier.citationThe 47th IEEE Semiconductor Interface Specialists Conference, San Diego, CA, USA, 7-10 December 2016-
dc.identifier.urihttp://hdl.handle.net/10722/247824-
dc.descriptionSession 11 - Poster Preview Session 4 – Si, High-k, Wide Bandgap Interfaces : no. 11.24-
dc.languageeng-
dc.relation.ispartofIEEE Semiconductor Interface Specialists Conference-
dc.titleImpacts of Ti incorporation on the electrical properties and reliability of GaAs metal-oxide-semiconductor capacitors with high-k NdTiON as gate dielectric-
dc.typeConference_Paper-
dc.identifier.emailChoi, HW: hwchoi@hku.hk-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityChoi, HW=rp00108-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.hkuros280935-
dc.publisher.placeSan Diego-

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