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Title	Author(s)	Issue Date	Views
BaTiO3 as Charge-Trapping Layer for Nonvolatile Memory Applications Journal:Solid State Electronics	HUANG, X Sin, JKO Lai, PT	2013	46
Charge-Trapping Characteristics of Ga2O3 Nanocrystals for Nonvolatile Memory Applications Journal:ECS Solid State Letters	HUANG, X Lai, PT Sin, JKO	2012	51
Charge-trapping characteristics of niobium-doped La2O3 for nonvolatile memory applications Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits Proceedings	Shi, RP Huang, X Leung, CH Lai, PT	2013	29
Direct Finite-Element-Based Solver for 3D-IC Thermal Analysis via H-Matrix Representation Proceeding/Conference:International Symposium & Exhibits on Quality Electronic Design (ISQED)	Li, YC Tan, S Yu, T Huang, X Wong, N	2014	32
Ga2O3(Gd2O3) as a Charge-Trapping Layer for Nonvolatile Memory Applications Journal:IEEE Transactions on Nanotechnology	Huang, X Sin, JKO Lai, PT	2013	58
H-matrix based finite-element-based thermal analysis for 3D ICs Journal:ACM Transactions on Design Automaticn of Electronic Systems	Chen, HB Li, YC Tan, SXD Huang, X Wang, H Wong, N	2015
HfON/LaON as charge-trapping layer for nonvolatile memory applications Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits Proceedings	Huang, X Lai, PT	2012
HfTiON as Charge-Trapping Layer for Nonvolatile Memory Applications Journal:ECS Transactions	HUANG, X Lai, PT	2012	45
IMECS 2011 - International MultiConference of Engineers and Computer Scientists 2011: Preface Journal:IMECS 2011 - International MultiConference of Engineers and Computer Scientists 2011	Abdelkader, YH AitKadi, D AlNajjar, B Allahverdi, A Amavasai, BP Henggeler, C Bouchaffra, D Bose, I Brabazon, A Brdys, M Cacheda, F Chan, AHS Chan, FTS Chang, CC Chaudhuri, P Chen, CH Chen, CS Chen, MS Chen, Q Choy, W Chung, TS Clubb, OL Damasio, MJ Dang, C Djordjevich, A Fung, YF Ganesan, G Leng, RGK Sing, GO Gracia, AM Gu, Z Gulpinar, N HeatonAdegbile, P HerreraViedma, E Herrero, JR Huang, X Hwang, CK Hwang, HS Ishihara, S Jia, L Kannan, R Karatzas, GP Katagiri, H Kendall, G Kikuta, K Kim, HK Kim, SI Kothari, C Krishnamoorthy, M Kumamoto, T Kwan, R Lee, HW Li, L Li, X Li, Y Lin, CM Liu, B Liu, L Lopez, EMM Luk, C Maeda, K Mahanti, PK Mahmoud, QH Matsatsinis, N Mavrommatis, G McGuigan, M Melin, P Mikhailov, L Mineno, H Monsuur, H Moon, C Murua, A Musliu, N Nakache, D Ni, J Nolle, L Ozalp, AA Pang, WK Papadopoulos, AN Piramuthu, S Premachandra, IM Seng, QT Sharma, D Sheu, JB Sheu, SH Resteanu, CIG Romero, C Saito, S Sawik, T Seva, RR Shakshuki, E Singh, V Siskos, Y Stoyan, YG Sun, J Sun, Z Rad, AB Resta, M Rodriguez, ML Rojas, R Tiwari, MK Tran, D Triguero, FH Tseng, LY Tsuda, S Tzeng, GH Utkin, LV Vaz, I Luis, JV Wang, HF Wang, L Wang, SH Watanabe, T Werner, F Wojnicki, I Wu, EX Wu, T Xie, G Xu, L Xu, SH Yang, GC Yang, XS Yu, KM Zanni, C Zhang, X Zhang, ZG Zhao, Y Zhao, Y Zopounidis, C	2011	188
Improved Charge-Trapping Characteristics of BaTiO3 by Zr Doping for Nonvolatile Memory Applications Journal:IEEE Electron Device Letters	Huang, X Sin, JKO Lai, PT	2013	27
Improved Charge-Trapping Characteristics of ZrO2 by Al Doping for Nonvolatile Memory Applications Journal:IEEE Transactions on Device and Materials Reliability	HUANG, X SHI, R Sin, JKO Lai, PT	2016	45
Improved Memory Window of MONOS Memory Capacitor with GdON as Charge Storage Layer Proceeding/Conference:I E E E Conference on Electron Devices and Solid-State Circuits Proceedings	Liu, L Xu, J Chen, JX Ji, F HUANG, X Lai, PT	2012	60
Improved performance of Hf-doped BaTiO3 as charge-traping layer for flash memory applications Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits Proceedings	Huang, X Lai, PT	2013	47
kHz-order linewidth controllable 1550 nm single-frequency fiber laser for coherent optical communication Journal:Optics Express	ZHOU, K ZHAO, Q HUANG, X YANG, C LI, C ZHOU, E XU, X Wong, KKY CHENG, H GAN, J FENG, Z PENG, M YANG, Z XU, S	2017	53
Nb-doped Gd2O3 as charge-trapping layer for nonvolatile memory applications Journal:Applied Physics Letters	SHI, R HUANG, X Sin, JKO Lai, PT	2015	50
Nonlinear varying-network magnetic circuit analysis for new doubly salient permanent magnet motors Proceeding/Conference:Proceedings of Chinese International Conference on Electrical Machines	Zhou, E Cheng, M Huang, X Sun, Q Chau, KT Chan, CC	1999
Positive Gate Bias and Temperature-Induced Instability of α -InGaZnO Thin-Film Transistor With ZrLaO Gate Dielectric Journal:IEEE Transactions on Electron Devices	HUANG, X SONG, J Lai, PT	2016	51
Recent Developments of Flexible InGaZnO Thin‐Film Transistors Journal:Physica Status Solidi A: Applications and Materials Science	SONG, J Huang, X Han, CY Yu, Y Su, Y Lai, PT	2021	8
Surface Passivation Using Lanthanide Oxynitrides for GaAs Metal–Oxide–Semiconductor Applications Journal:IEEE Transactions on Electron Devices	LIU, L TANG, WM HUANG, X XU, JP Lai, PT	2019	12
Ultrathin HfON/SiO2 dual tunneling layer for improving the electrical properties of metal-oxide–nitride-oxide-silicon memory Journal:Thin Solid Films	Liu, L Xu, J Chen, JX Ji, F HUANG, X Lai, PT	2012	64

Showing results 1 to 20 of 20