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Article: Ga2O3(Gd2O3) as a Charge-Trapping Layer for Nonvolatile Memory Applications

TitleGa2O3(Gd2O3) as a Charge-Trapping Layer for Nonvolatile Memory Applications
Authors
Huang, XSin, JKOLai, PT
KeywordsCharge-trapping layer
Ga2O3 (Gd2O3)
high-k
nitridation
nonvolatile memory
Issue Date2013
Citation
IEEE Transactions on Nanotechnology, 2013, v. 12, n. 2, p. 157-162 How to Cite?
DOI: http://dx.doi.org/10.1109/TNANO.2012.2236350
Persistent Identifierhttp://hdl.handle.net/10722/191389
ISSN
1536-125X
2023 Impact Factor: 2.1
2023 SCImago Journal Rankings: 0.435
ISI Accession Number ID
WOS:000316201000008

 

DC FieldValueLanguage
dc.contributor.authorHuang, Xen_US
dc.contributor.authorSin, JKOen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2013-10-15T06:55:36Z-
dc.date.available2013-10-15T06:55:36Z-
dc.date.issued2013en_US
dc.identifier.citationIEEE Transactions on Nanotechnology, 2013, v. 12, n. 2, p. 157-162en_US
dc.identifier.issn1536-125X-
dc.identifier.urihttp://hdl.handle.net/10722/191389-
dc.languageengen_US
dc.relation.ispartofIEEE Transactions on Nanotechnologyen_US
dc.subjectCharge-trapping layer-
dc.subjectGa2O3 (Gd2O3)-
dc.subjecthigh-k-
dc.subjectnitridation-
dc.subjectnonvolatile memory-
dc.titleGa2O3(Gd2O3) as a Charge-Trapping Layer for Nonvolatile Memory Applicationsen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/TNANO.2012.2236350-
dc.identifier.scopuseid_2-s2.0-84874951879-
dc.identifier.hkuros226007en_US
dc.identifier.volume12en_US
dc.identifier.issue2-
dc.identifier.spage157en_US
dc.identifier.epage162en_US
dc.identifier.eissn1941-0085-
dc.identifier.isiWOS:000316201000008-
dc.identifier.issnl1536-125X-

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