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- Publisher Website: 10.1109/EDSSC.2013.6628237
- Scopus: eid_2-s2.0-84890536400
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Conference Paper: Improved performance of Hf-doped BaTiO3 as charge-traping layer for flash memory applications
Title | Improved performance of Hf-doped BaTiO3 as charge-traping layer for flash memory applications |
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Authors | |
Keywords | Flash memory Charge-trapping layer Hf-doped BaTi03 |
Issue Date | 2013 |
Publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853 |
Citation | The 2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, 3-5 June 2013. In Conference Proceedings, 2013, p. 1-2 How to Cite? |
Abstract | BaTi03 with and without Hf incorporation was studied as charge-trapping layer (CTL) for flash memory applications. Comparing with the device with BaTi03 CTL, the one with Hf-doped BaTi03 shows better performance in terms of higher program speed and better data retention due to suppressed leakage by Hf incorporated in BaTi03• Therefore, the Hf-doped BaTi03 is a promising candidate as CTL for flash memory application. |
Persistent Identifier | http://hdl.handle.net/10722/191663 |
ISBN |
DC Field | Value | Language |
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dc.contributor.author | Huang, X | en_US |
dc.contributor.author | Lai, PT | en_US |
dc.date.accessioned | 2013-10-15T07:14:58Z | - |
dc.date.available | 2013-10-15T07:14:58Z | - |
dc.date.issued | 2013 | en_US |
dc.identifier.citation | The 2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, 3-5 June 2013. In Conference Proceedings, 2013, p. 1-2 | en_US |
dc.identifier.isbn | 978-1-4673-2523-3 | - |
dc.identifier.uri | http://hdl.handle.net/10722/191663 | - |
dc.description.abstract | BaTi03 with and without Hf incorporation was studied as charge-trapping layer (CTL) for flash memory applications. Comparing with the device with BaTi03 CTL, the one with Hf-doped BaTi03 shows better performance in terms of higher program speed and better data retention due to suppressed leakage by Hf incorporated in BaTi03• Therefore, the Hf-doped BaTi03 is a promising candidate as CTL for flash memory application. | - |
dc.language | eng | en_US |
dc.publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853 | - |
dc.relation.ispartof | IEEE Conference on Electron Devices and Solid-State Circuits Proceedings | en_US |
dc.subject | Flash memory | - |
dc.subject | Charge-trapping layer | - |
dc.subject | Hf-doped BaTi03 | - |
dc.title | Improved performance of Hf-doped BaTiO3 as charge-traping layer for flash memory applications | en_US |
dc.type | Conference_Paper | en_US |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | en_US |
dc.identifier.authority | Lai, PT=rp00130 | en_US |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/EDSSC.2013.6628237 | - |
dc.identifier.scopus | eid_2-s2.0-84890536400 | - |
dc.identifier.hkuros | 226079 | en_US |
dc.identifier.spage | 1 | - |
dc.identifier.epage | 2 | - |
dc.publisher.place | United States | en_US |
dc.customcontrol.immutable | sml 131108 | - |