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Article: BaTiO3 as Charge-Trapping Layer for Nonvolatile Memory Applications

TitleBaTiO3 as Charge-Trapping Layer for Nonvolatile Memory Applications
Authors
HUANG, XSin, JKOLai, PT
KeywordsBaTiO 3
Charge-trapping layer
High-k dielectric
Nonvolatile memory
Issue Date2013
Citation
Solid State Electronics, 2013, v. 79, p. 285-289 How to Cite?
DOI: http://dx.doi.org/10.1016/j.sse.2012.09.005
Persistent Identifierhttp://hdl.handle.net/10722/191386
ISI Accession Number ID
WOS:000313611000054

 

DC FieldValueLanguage
dc.contributor.authorHUANG, Xen_US
dc.contributor.authorSin, JKOen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2013-10-15T06:55:35Z-
dc.date.available2013-10-15T06:55:35Z-
dc.date.issued2013en_US
dc.identifier.citationSolid State Electronics, 2013, v. 79, p. 285-289en_US
dc.identifier.urihttp://hdl.handle.net/10722/191386-
dc.languageengen_US
dc.relation.ispartofSolid State Electronicsen_US
dc.subjectBaTiO 3-
dc.subjectCharge-trapping layer-
dc.subjectHigh-k dielectric-
dc.subjectNonvolatile memory-
dc.titleBaTiO3 as Charge-Trapping Layer for Nonvolatile Memory Applicationsen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.identifier.doi10.1016/j.sse.2012.09.005-
dc.identifier.scopuseid_2-s2.0-84869488616-
dc.identifier.hkuros225978en_US
dc.identifier.volume79en_US
dc.identifier.spage285en_US
dc.identifier.epage289en_US
dc.identifier.isiWOS:000313611000054-

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