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Article: Nb-doped Gd2O3 as charge-trapping layer for nonvolatile memory applications

TitleNb-doped Gd2O3 as charge-trapping layer for nonvolatile memory applications
Authors
Issue Date2015
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2015, v. 107 n. 16, article no. 163501 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/234054
ISSN
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorSHI, R-
dc.contributor.authorHUANG, X-
dc.contributor.authorSin, JKO-
dc.contributor.authorLai, PT-
dc.date.accessioned2016-10-14T06:58:46Z-
dc.date.available2016-10-14T06:58:46Z-
dc.date.issued2015-
dc.identifier.citationApplied Physics Letters, 2015, v. 107 n. 16, article no. 163501-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/234054-
dc.languageeng-
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/-
dc.relation.ispartofApplied Physics Letters-
dc.rightsCopyright 2015 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Applied Physics Letters, 2015, v. 107 n. 16, article no. 163501 and may be found at https://doi.org/10.1063/1.4934183-
dc.titleNb-doped Gd2O3 as charge-trapping layer for nonvolatile memory applications-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4934183-
dc.identifier.scopuseid_2-s2.0-84945151913-
dc.identifier.hkuros267827-
dc.identifier.volume107-
dc.identifier.issue16-
dc.identifier.spagearticle no. 163501-
dc.identifier.epagearticle no. 163501-
dc.identifier.isiWOS:000363781900037-
dc.publisher.placeUnited States-
dc.identifier.issnl0003-6951-

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