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Title	Author(s)	Issue Date
1 kV GaN-on-Si Quasi-Vertical Schottky Rectifier Journal:IEEE Electron Device Letters	Qin, Yuan Xiao, Ming Zhang, Ruizhe Xie, Qingyun Palacios, Tomas Wang, Boyan Ma, Yunwei Kravchenko, Ivan Briggs, Dayrl P.Hensley, Dale K.Srijanto, Bernadeta R.Zhang, Yuhao	2023
1 kV Self-Aligned Vertical GaN Superjunction Diode Journal:IEEE Electron Device Letters	Ma, Yunwei Porter, Matthew Qin, Yuan Spencer, Joseph Du, Zhonghao Xiao, Ming Wang, Yifan Kravchenko, Ivan Briggs, Dayrl P.Hensley, Dale K.Udrea, Florin Tadjer, Marko Wang, Han Zhang, Yuhao	2024
1.2-kV Vertical GaN Fin-JFETs: High-Temperature Characteristics and Avalanche Capability Journal:IEEE Transactions on Electron Devices	Liu, Jingcun Xiao, Ming Zhang, Ruizhe Pidaparthi, Subhash Cui, Hao Edwards, Andrew Craven, Michael Baubutr, Lek Drowley, Cliff Zhang, Yuhao	2021
10 kV GaN Power Diodes and Transistors with Performance beyond SiC Limit Proceeding/Conference:6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022	Zhang, Yuhao Xiao, Ming Ma, Yunwei Cheng, Kai	2022
10 kV, 39 mΩ·cm<sup>2</sup>Multi-Channel AlGaN/GaN Schottky Barrier Diodes Journal:IEEE Electron Device Letters	Xiao, Ming Ma, Yunwei Liu, Kai Cheng, Kai Zhang, Yuhao	2021
10-kV Ga<inf>2</inf>O<inf>3</inf>Charge-Balance Schottky Rectifier Operational at 200 °C Journal:IEEE Electron Device Letters	Qin, Yuan Xiao, Ming Porter, Matthew Ma, Yunwei Spencer, Joseph Du, Zhonghao Jacobs, Alan G.Sasaki, Kohei Wang, Han Tadjer, Marko Zhang, Yuhao	2023
2 kV, 0.7 mO•cm<sup>2</sup> Vertical Ga<inf>2</inf>O<inf>3</inf> Superjunction Schottky Rectifier with Dynamic Robustness Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Qin, Yuan Porter, Matthew Xiao, Ming Du, Zhonghao Zhang, Hongming Ma, Yunwei Spencer, Joseph Wang, Boyan Song, Qihao Sasaki, Kohei Lin, Chia Hung Kravchenko, Ivan Briggs, Dayrl P.Hensley, Dale K.Tadjer, Marko Wang, Han Zhang, Yuhao	2023
2.5 kV Vertical Ga<inf>2</inf>O<inf>3</inf>Schottky Rectifier With Graded Junction Termination Extension Journal:IEEE Electron Device Letters	Wang, Boyan Xiao, Ming Spencer, Joseph Qin, Yuan Sasaki, Kohei Tadjer, Marko J.Zhang, Yuhao	2023
3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes with P-GaN Termination Journal:IEEE Electron Device Letters	Xiao, Ming Ma, Yunwei Cheng, Kai Liu, Kai Xie, Andy Beam, Edward Cao, Yu Zhang, Yuhao	2020
A perspective on multi-channel technology for the next-generation of GaN power devices Journal:Applied Physics Letters	Nela, Luca Xiao, Ming Zhang, Yuhao Matioli, Elison	2022
Activating Thick Buried p-GaN for Device Applications Journal:IEEE Transactions on Electron Devices	Ma, Yunwei Xiao, Ming Du, Zhonghao Wang, Lei Carlson, Eric Guido, Louis Wang, Han Wang, Lai Luo, Yi Zhang, Yuhao	2022
An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics Journal:Nature Communications	Zhou, Feng Gong, Hehe Xiao, Ming Ma, Yunwei Wang, Zhengpeng Yu, Xinxin Li, Li Fu, Lan Tan, Hark Hoe Yang, Yi Ren, Fang Fang Gu, Shulin Zheng, Youdou Lu, Hai Zhang, Rong Zhang, Yuhao Ye, Jiandong	2023
Application of noise to avoid overfitting in TCAD augmented machine learning Proceeding/Conference:International Conference on Simulation of Semiconductor Processes and Devices, SISPAD	Raju, Sophia Susan Wang, Boyan Mehta, Kashyap Xiao, Ming Zhang, Yuhao Wong, Hiu Yung	2020
Chip Size Minimization for Wide and Ultrawide Bandgap Power Devices Journal:IEEE Transactions on Electron Devices	Wang, Boyan Xiao, Ming Zhang, Zichen Wang, Yifan Qin, Yuan Song, Qihao Lu, Guo Quan Ngo, Khai Zhang, Yuhao	2023
Design and simulation of gan superjunction transistors with 2-deg channels and fin channels Journal:IEEE Journal of Emerging and Selected Topics in Power Electronics	Xiao, Ming Zhang, Ruizhe Dong, Dong Wang, Han Zhang, Yuhao	2019
Design Space of Vertical Ga<inf>2</inf>O<inf>3</inf>Junctionless FinFET and its Enhancement with Gradual Channel Doping Proceeding/Conference:2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020	Elwailly, Adam Xiao, Ming Zhang, Yuhao Wong, Hiu Yung	2020
Enhanced Avalanche (2.1 kV, 83 A) in NiO/Ga<inf>2</inf>O<inf>3</inf> Heterojunction by Edge Termination Optimization Journal:IEEE Electron Device Letters	Gong, Hehe Zhou, Feng Xiao, Ming Yang, Zineng Ren, Fang Fang Gu, Shulin Lu, Hai Zhang, Rong Zhang, Yuhao Ye, Jiandong	2024
Evaluation of 650V, 100A Direct-Drive GaN Power Switch for Electric Vehicle Powertrain Applications Proceeding/Conference:2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 - Proceedings	Song, Qihao Kozak, Joseph P.Xiao, Ming Ma, Yunwei Wang, Boyan Zhang, Ruizhe Volkov, Roman Smith, Kurt Baksht, Tamara Zhang, Yuhao	2021
First Demonstration of Vertical Superjunction Diode in GaN Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Xiao, Ming Ma, Yunwei Du, Zhonghao Qin, Yuan Liu, Kai Cheng, Kai Udrea, Florin Xie, Andy Beam, Edward Wang, Boyan Spencer, Joseph Tadjer, Marko Anderson, Travis Wang, Han Zhang, Yuhao	2022
Full-Duplex and C-RAN Based Multi-Cell Non-Orthogonal Multiple Access over 5G Wireless Networks Proceeding/Conference:IEEE International Conference on Communications	Liu, Gang Chen, Xianhao Ma, Zheng Zhang, Xi Xiao, Ming Fan, Pingzhi	2019

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