Browsing by Author Xiao, Ming

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Showing results 1 to 18 of 18
TitleAuthor(s)Issue Date
 
10-kV Ga<inf>2</inf>O<inf>3</inf>Charge-Balance Schottky Rectifier Operational at 200 °C
Journal:IEEE Electron Device Letters
Qin, YuanXiao, MingPorter, MatthewMa, YunweiSpencer, JosephDu, ZhonghaoJacobs, Alan G.Sasaki, KoheiWang, HanTadjer, MarkoZhang, Yuhao
2023
 
Activating Thick Buried p-GaN for Device Applications
Journal:IEEE Transactions on Electron Devices
Ma, YunweiXiao, MingDu, ZhonghaoWang, LeiCarlson, EricGuido, LouisWang, HanWang, LaiLuo, YiZhang, Yuhao
2022
 
Design and simulation of gan superjunction transistors with 2-deg channels and fin channels
Journal:IEEE Journal of Emerging and Selected Topics in Power Electronics
Xiao, MingZhang, RuizheDong, DongWang, HanZhang, Yuhao
2019
 
First Demonstration of Vertical Superjunction Diode in GaN
Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM
Xiao, MingMa, YunweiDu, ZhonghaoQin, YuanLiu, KaiCheng, KaiUdrea, FlorinXie, AndyBeam, EdwardWang, BoyanSpencer, JosephTadjer, MarkoAnderson, TravisWang, HanZhang, Yuhao
2022
 
Full-Duplex and C-RAN Based Multi-Cell Non-Orthogonal Multiple Access over 5G Wireless Networks
Proceeding/Conference:IEEE International Conference on Communications
Liu, GangChen, XianhaoMa, ZhengZhang, XiXiao, MingFan, Pingzhi
2019
 
High-voltage vertical Ga<inf>2</inf>O<inf>3</inf> power rectifiers operational at high temperatures up to 600 K
Journal:Applied Physics Letters
Wang, BoyanXiao, MingYan, XiaodongWong, Hiu YungMa, JiahuiSasaki, KoheiWang, HanZhang, Yuhao
2019
 
(Invited) Multi-Channel AlGaN/GaN Power Rectifiers: Breakthrough Performance up to 10 kV
Proceeding/Conference:ECS Transactions
Zhang, YuhaoXiao, MingMa, YunweiDu, ZhonghaoWang, HanXie, AndyBeam, EdwardCao, YuCheng, Kai
2021
 
Kilovolt Tri-Gate GaN Junction HEMTs with High Thermal Stability
Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Ma, YunweiXiao, MingZhang, YuhaoDu, ZhonghaoYan, XiaodongWang, HanCheng, KaiClavel, MichaelHudait, Mantu K.Tao, LeiLin, FengKravchenko, Ivan
2021
 
Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN
Journal:Applied Physics Letters
Xiao, MingDu, ZhonghaoXie, JinqiaoBeam, EdwardYan, XiaodongCheng, KaiWang, HanCao, YuZhang, Yuhao
2020
 
NiO Junction Termination Extension for Ga<inf>2</inf>O<inf>3</inf>Devices: High Blocking Field, Low Capacitance, and Fast Switching Speed
Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Xiao, MingWang, BoyanZhang, RuizheSong, QihaoSpencer, JosephDu, ZhonghaoQin, YuanSasaki, KoheiWang, HanTadjer, MarkoZhang, Yuhao
2023
 
Origin of leakage current in vertical GaN devices with nonplanar regrown p-GaN
Journal:Applied Physics Letters
Xiao, MingYan, XiaodongXie, JinqiaoBeam, EdwardCao, YuWang, HanZhang, Yuhao
2020
 
Superjunction Power Transistors with Interface Charges: A Case Study for GaN
Journal:IEEE Journal of the Electron Devices Society
Ma, YunweiXiao, MingZhang, RuizheWang, HanZhang, Yuhao
2020
 
Syn-tectonic fluids decoding effects of tectono-metamorphic cycles on regional metallogenic evolution of the Chinese Altai, central Asia
Journal:GSA Bulletin
Xiao, MingJiang, YingdeZhao, GuochunYuan, ChaoCai, YueQiu, HuaningHao, LuluZhang, WanfengKong, Lingzhu
10-Aug-2023
 
TCAD-Machine learning framework for device variation and operating temperature analysis with experimental demonstration
Journal:IEEE Journal of the Electron Devices Society
Wong, Hiu YungXiao, MingWang, BoyanChiu, Yan KaYan, XiaodongMa, JiahuiSasaki, KoheiWang, HanZhang, Yuhao
2020
 
The public participation system in the government policy-making in China: a shortcut to legitimizing the stateor an entrenchment of its democratization?
Xiao, Ming肖明
Advisor(s):Fu, HZheng, G
2012
 
Tri-gate GaN junction HEMT
Journal:Applied Physics Letters
Ma, YunweiXiao, MingDu, ZhonghaoYan, XiaodongCheng, KaiClavel, MichaelHudait, Mantu K.Kravchenko, IvanWang, HanZhang, Yuhao
2020
 
Tri-Gate GaN Junction HEMTs: Physics and Performance Space
Journal:IEEE Transactions on Electron Devices
Ma, YunweiXiao, MingDu, ZhonghaoWang, HanZhang, Yuhao
2021
 
Vertical GaN Superjunction FinFET: A Novel Device Enabling Multi-Kilovolt and Megahertz Power Switching
Proceeding/Conference:Device Research Conference - Conference Digest, DRC
Xiao, MingZhang, RuizheSchlenvogt, GarrettJokinen, ThomasWang, HanZhang, Yuhao
2019
Showing results 1 to 18 of 18