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Conference Paper: Evaluation of 650V, 100A Direct-Drive GaN Power Switch for Electric Vehicle Powertrain Applications

TitleEvaluation of 650V, 100A Direct-Drive GaN Power Switch for Electric Vehicle Powertrain Applications
Authors
KeywordsDirect drive
Gallium nitride
High electron mobility transistor
Inverters
Performance evaluation
Robustness
Short circuit
Surge energy
Switching loss
Issue Date2021
Citation
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 - Proceedings, 2021, p. 28-33 How to Cite?
AbstractThis paper presents the evaluation of a 650-V, 100-A, 22-mΩ rated D 3GaN (Direct Drive Depletion-mode) power switch (V22TC6581A) from VisIC Technologies, which is designed for electric vehicles (EV) powertrain inverter applications. The static and dynamic performance as well as the surge-energy and short-circuit robustness of the D 3 GaN were evaluated in a top-cooled surface-mount device package. Multiple customized test boards were employed to evaluate the switching loss, dynamic on-resistance, gate charge (Q g), and robustness. The D 3GaN switch has shown a small total Q g, high breakdown voltage, positive threshold voltage, small switching-energy loss, fast switching speed, and good robustness. These advantages make the D3GaN switch an attractive candidate for high-power EV powertrain inverter applications. To the best of our knowledge, this paper presents the first comprehensive evaluation of a high-power GaN device targeted for EV inverter applications.
Persistent Identifierhttp://hdl.handle.net/10722/352269

 

DC FieldValueLanguage
dc.contributor.authorSong, Qihao-
dc.contributor.authorKozak, Joseph P.-
dc.contributor.authorXiao, Ming-
dc.contributor.authorMa, Yunwei-
dc.contributor.authorWang, Boyan-
dc.contributor.authorZhang, Ruizhe-
dc.contributor.authorVolkov, Roman-
dc.contributor.authorSmith, Kurt-
dc.contributor.authorBaksht, Tamara-
dc.contributor.authorZhang, Yuhao-
dc.date.accessioned2024-12-16T03:57:42Z-
dc.date.available2024-12-16T03:57:42Z-
dc.date.issued2021-
dc.identifier.citation2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 - Proceedings, 2021, p. 28-33-
dc.identifier.urihttp://hdl.handle.net/10722/352269-
dc.description.abstractThis paper presents the evaluation of a 650-V, 100-A, 22-mΩ rated D 3GaN (Direct Drive Depletion-mode) power switch (V22TC6581A) from VisIC Technologies, which is designed for electric vehicles (EV) powertrain inverter applications. The static and dynamic performance as well as the surge-energy and short-circuit robustness of the D 3 GaN were evaluated in a top-cooled surface-mount device package. Multiple customized test boards were employed to evaluate the switching loss, dynamic on-resistance, gate charge (Q g), and robustness. The D 3GaN switch has shown a small total Q g, high breakdown voltage, positive threshold voltage, small switching-energy loss, fast switching speed, and good robustness. These advantages make the D3GaN switch an attractive candidate for high-power EV powertrain inverter applications. To the best of our knowledge, this paper presents the first comprehensive evaluation of a high-power GaN device targeted for EV inverter applications.-
dc.languageeng-
dc.relation.ispartof2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 - Proceedings-
dc.subjectDirect drive-
dc.subjectGallium nitride-
dc.subjectHigh electron mobility transistor-
dc.subjectInverters-
dc.subjectPerformance evaluation-
dc.subjectRobustness-
dc.subjectShort circuit-
dc.subjectSurge energy-
dc.subjectSwitching loss-
dc.titleEvaluation of 650V, 100A Direct-Drive GaN Power Switch for Electric Vehicle Powertrain Applications-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/WiPDA49284.2021.9645143-
dc.identifier.scopuseid_2-s2.0-85124018681-
dc.identifier.spage28-
dc.identifier.epage33-

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