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Browsing by Author TANG, WM
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Showing results 130 to 149 of 290
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Title
Author(s)
Issue Date
Views
Hydrogen Sensor Based on Pentacene Organic Thin-Film Transistor for Flexible Applications
Proceeding/Conference:
IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
Li, B
Lai, PT
Tang, WM
2018
51
Hydrogen sensor based on pentacene thin-film transistor
Proceeding/Conference:
IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
Li, B
Lai, PT
Tang, WM
2016
69
Hydrogen sensors based on TFTs with catalytic source/drain electrodes: IGZO versus pentacene
Journal:
IEEE Electron Device Letters
LI, B
Lai, PT
TANG, WM
2018
85
Impact of Nitrogen Incorporation on the Interface Between Ge and La2O3 or Y2O3 Gate Dielectric: A Study on the Formation of Germanate
Journal:
IEEE Transactions on Electron Devices
Cheng, ZX
Liu, L
Xu, JP
Huang, Y
Lai, PT
Tang, WM
2016
41
Improved carrier mobility of pentacene organic TFTs by suppressed oxide growth at remote interface using nitrogen doping in high-k NdNbO dielectric
Journal:
Organic Electronics
MA, Y
Tang, WM
Lai, PT
2022
Improved Characteristics of InGaZnO Thin-Film Transistor by using Fluorine Implant
Journal:
ECS Solid State Letters
Qian, LX
Tang, WM
Lai, PT
2014
40
Improved electrical performance of multilayer MoS2 transistor by incorporating Al into host HfO2 as gate dielectric
Journal:
Applied Physics Express
ZHAO, X
XU, J
LIU, L
Lai, PT
TANG, WM
2019
22
Improved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate Dielectric
Journal:
IEEE Transactions on Electron Devices
Wen, M
Xu, JP
Liu, L
Lai, PT
Tang, WM
2017
55
Improved electrical properties of MoS2 transistor with Hf1-xTixO as gate dielectric
Proceeding/Conference:
IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
Zhao, X
Xu, JP
Liu, L
Lai, PT
Tang, WM
2019
18
Improved hydrogen-sensing performance of Pd/WO3/SiC Schottky diode by La doping
Proceeding/Conference:
IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
Liu, Y
Lai, PT
Tang, WM
2016
Improved interfacial and electrical properties of few-layered MoS2 FETs with plasma-treated Al2O3 as gate dielectric
Journal:
Applied Surface Science
SONG, X
XU, J
LIU, L
Lai, PT
TANG, WM
2019
12
Improved Interfacial and Electrical Properties of GaAs Metal–Oxide–Semiconductor Capacitor by Using Fluorine-Plasma-Treated Interfacial Passivation Layer
Journal:
IEEE Transactions on Device and Materials Reliability
Lu, HH
Xu, JP
Liu, L
Lai, PT
Tang, WM
2017
50
Improved Interfacial and Electrical Properties of GaAs MOS Capacitor With LaON/TiON Multilayer Composite Gate Dielectric and LaON as Interfacial Passivation Layer
Journal:
IEEE Transactions on Electron Devices
Lu, HH
Liu, L
Xu, JP
Lai, PT
Tang, WM
2017
Improved interfacial and electrical properties of Ge MOS capacitor by using TaON/LaON dual passivation interlayer
Journal:
Applied Physics Letters
Cheng, ZX
Xu, JP
Liu, L
Huang, Y
Lai, PT
Tang, WM
2016
61
Improved interfacial and electrical properties of Ge MOS capacitor with ZrON/TaON multilayer composite gate dielectric by using fluorinated Si passivation layer
Journal:
Applied Physics Letters
HUANG, Y
XU, JP
LIU, L
CHENG, ZX
Lai, PT
TANG, WM
2017
26
Improved interfacial and electrical properties of HfLaON gate dielectric Ge MOS capacitor by NbON/Si dual passivation layer and fluorine incorporation
Journal:
Applied Physics Letters
Huang, Y
Xu, JP
Liu, L
Lai, PT
Tang, WM
2016
55
Improved interfacial and electrical properties of HfTiON gate-dielectric Ge MOS capacitor by using LaON/Si dual passivation layer and fluorine-plasma treatment
Journal:
Applied Surface Science
Huang, Y
Xu, JP
Liu, L
Cheng, ZX
Lai, PT
Tang, WM
2019
18
Improved Interfacial and Electrical Properties of MoS2 Transistor With High/Low-Temperature Grown Hf0.5Al0.5O as Top-Gate Dielectric
Journal:
IEEE Electron Device Letters
Zhao, XY
Xu, JP
Liu, L
Lai, PT
Tang, WM
2020
18
Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH 3 -plasma treated yittrium-oxynitride as interfacial passivation layer
Journal:
Microelectronics Reliability
Lu, HH
Xu, JP
Liu, L
Wang, LS
Lai, PT
Tang, WM
2016
49
Improved performance for OTFT with HfTiO2 as gate dielectric by N2O annealing
Proceeding/Conference:
IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC)
Tang, WM
Cheng, KH
Leung, CH
Lai, PT
Xu, J
Che, CM
2007
