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Article: Improved Characteristics of InGaZnO Thin-Film Transistor by using Fluorine Implant

TitleImproved Characteristics of InGaZnO Thin-Film Transistor by using Fluorine Implant
Authors
Qian, LXTang, WMLai, PT
Issue Date2014
PublisherElectrochemical Society, Inc. The Journal's web site is located at http://ssl.ecsdl.org/
Citation
ECS Solid State Letters, 2014, v. 3 n. 8, p. 87-90 How to Cite?
DOI: http://dx.doi.org/10.1149/2.0121407ssl
Persistent Identifierhttp://hdl.handle.net/10722/218746
ISSN
2162-8742
2016 Impact Factor: 1.184
ISI Accession Number ID
WOS:000339000900003

 

DC FieldValueLanguage
dc.contributor.authorQian, LX-
dc.contributor.authorTang, WM-
dc.contributor.authorLai, PT-
dc.date.accessioned2015-09-18T06:52:15Z-
dc.date.available2015-09-18T06:52:15Z-
dc.date.issued2014-
dc.identifier.citationECS Solid State Letters, 2014, v. 3 n. 8, p. 87-90-
dc.identifier.issn2162-8742-
dc.identifier.urihttp://hdl.handle.net/10722/218746-
dc.languageeng-
dc.publisherElectrochemical Society, Inc. The Journal's web site is located at http://ssl.ecsdl.org/-
dc.relation.ispartofECS Solid State Letters-
dc.rightsECS Solid State Letters. Copyright © Electrochemical Society, Inc.-
dc.titleImproved Characteristics of InGaZnO Thin-Film Transistor by using Fluorine Implant-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturepostprint-
dc.identifier.doi10.1149/2.0121407ssl-
dc.identifier.scopuseid_2-s2.0-84906666737-
dc.identifier.hkuros253925-
dc.identifier.volume3-
dc.identifier.issue8-
dc.identifier.spage87-
dc.identifier.epage90-
dc.identifier.isiWOS:000339000900003-
dc.publisher.placeUnited States-
dc.identifier.issnl2162-8750-

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