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Article: Improved carrier mobility of pentacene organic TFTs by suppressed oxide growth at remote interface using nitrogen doping in high-k NdNbO dielectric

TitleImproved carrier mobility of pentacene organic TFTs by suppressed oxide growth at remote interface using nitrogen doping in high-k NdNbO dielectric
Authors
MA, YTang, WMLai, PT
Issue Date2022
Citation
Organic Electronics, 2022, v. 102, p. 106427 How to Cite?
DOI: http://dx.doi.org/10.1016/j.orgel.2021.106427
Persistent Identifierhttp://hdl.handle.net/10722/315117
ISI Accession Number ID
WOS:000788851800004

 

DC FieldValueLanguage
dc.contributor.authorMA, Y-
dc.contributor.authorTang, WM-
dc.contributor.authorLai, PT-
dc.date.accessioned2022-08-05T09:40:30Z-
dc.date.available2022-08-05T09:40:30Z-
dc.date.issued2022-
dc.identifier.citationOrganic Electronics, 2022, v. 102, p. 106427-
dc.identifier.urihttp://hdl.handle.net/10722/315117-
dc.languageeng-
dc.relation.ispartofOrganic Electronics-
dc.titleImproved carrier mobility of pentacene organic TFTs by suppressed oxide growth at remote interface using nitrogen doping in high-k NdNbO dielectric-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1016/j.orgel.2021.106427-
dc.identifier.hkuros335016-
dc.identifier.volume102-
dc.identifier.spage106427-
dc.identifier.epage106427-
dc.identifier.isiWOS:000788851800004-

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