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- Publisher Website: 10.1109/EDSSC.2018.8487082
- Scopus: eid_2-s2.0-85056327818
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Conference Paper: Hydrogen Sensor Based on Pentacene Organic Thin-Film Transistor for Flexible Applications
Title | Hydrogen Sensor Based on Pentacene Organic Thin-Film Transistor for Flexible Applications |
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Authors | |
Keywords | Curved surface Flexible electronics H sensor OTFT |
Issue Date | 2018 |
Publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853 |
Citation | Proceedings of 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC), Shenzhen, China, -8 June 2018 How to Cite? |
Abstract | A flexible hydrogen gas sensor based on pentacene organic thin-film transistor (OTFT) using palladium (Pd) source and drain (S/D) electrodes as the sensing medium is prepared on adhesive vacuum tape. The sensor exhibits a clear, rapid and concentration-dependent response upon hydrogen exposure without the need of heating. In addition, in order to demonstrate the flexibility of the sensor, measurements on a curved surface are performed. The sensor, when attached to the curved surface, shows normal transistor characteristics, which essentially remains the same after one hour of tensile stress. |
Persistent Identifier | http://hdl.handle.net/10722/262434 |
DC Field | Value | Language |
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dc.contributor.author | Li, B | - |
dc.contributor.author | Lai, PT | - |
dc.contributor.author | Tang, WM | - |
dc.date.accessioned | 2018-09-28T04:59:16Z | - |
dc.date.available | 2018-09-28T04:59:16Z | - |
dc.date.issued | 2018 | - |
dc.identifier.citation | Proceedings of 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC), Shenzhen, China, -8 June 2018 | - |
dc.identifier.uri | http://hdl.handle.net/10722/262434 | - |
dc.description.abstract | A flexible hydrogen gas sensor based on pentacene organic thin-film transistor (OTFT) using palladium (Pd) source and drain (S/D) electrodes as the sensing medium is prepared on adhesive vacuum tape. The sensor exhibits a clear, rapid and concentration-dependent response upon hydrogen exposure without the need of heating. In addition, in order to demonstrate the flexibility of the sensor, measurements on a curved surface are performed. The sensor, when attached to the curved surface, shows normal transistor characteristics, which essentially remains the same after one hour of tensile stress. | - |
dc.language | eng | - |
dc.publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853 | - |
dc.relation.ispartof | IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) | - |
dc.rights | IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). Copyright © IEEE. | - |
dc.subject | Curved surface | - |
dc.subject | Flexible electronics | - |
dc.subject | H sensor | - |
dc.subject | OTFT | - |
dc.title | Hydrogen Sensor Based on Pentacene Organic Thin-Film Transistor for Flexible Applications | - |
dc.type | Conference_Paper | - |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | - |
dc.identifier.authority | Lai, PT=rp00130 | - |
dc.identifier.doi | 10.1109/EDSSC.2018.8487082 | - |
dc.identifier.scopus | eid_2-s2.0-85056327818 | - |
dc.identifier.hkuros | 292233 | - |
dc.publisher.place | United States | - |