Showing results 1 to 7 of 7
Title | Author(s) | Issue Date | Views | |
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2019 | 26 | |||
Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric Journal:Microelectronics Reliability | 2008 | 239 | ||
Improved electrical properties of germanium MOS capacitors with gate dielectric grown in wet-NO ambient Journal:IEEE Electron Device Letters | 2006 | 190 | ||
Improved electrical properties of HfTiO/GeO x N y gate dielectric Ge MOS capacitors by using wet-NO Ge-surface pretreatment Journal:Applied Physics A: Materials Science and Processing | 2009 | 193 | ||
2007 | 184 | |||
A threshold-voltage model of SiGe-channel pMOSFET without Si cap layer Journal:Microelectronics Reliability | 2007 | 205 | ||
2009 | 187 |