Showing results 15 to 21 of 21
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Title | Author(s) | Issue Date | Views | |
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Reactive ion etching of gallium nitride using hydrogen bromide plasmas Journal:Electronics Letters | 1994 | 170 | ||
A reliability comparison of InGaP/GaAs HBTs with and without passivation ledge Journal:Microelectronics Reliability | 2001 | 155 | ||
SiGe pMOSFET's with gate oxide fabricated by microwave electron cyclotron resonance plasma processing Journal:IEEE Electron Device Letters | 1994 | |||
State holding circuit using heterojunction bipolar transistors and resonant tunnelling diodes Journal:Electronics Letters | 1994 | 152 | ||
Surface recombination current in InGaP/GaAs heterostructure-emitter bipolar transistors Journal:IEEE Transactions on Electron Devices | 1994 | 161 | ||
Temperature dependence of current gain of GalnP/GaAs heteroj unction and heterostructure-emitter bipolar transistors Journal:IEEE Transactions on Electron Devices | 1999 | 165 | ||
Thermal effect on current gains of an AlGaAs/GaAs heterostructure-emitter bipolar transistor Journal:Applied Physics Letters | 1999 | 164 |