File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: State holding circuit using heterojunction bipolar transistors and resonant tunnelling diodes

TitleState holding circuit using heterojunction bipolar transistors and resonant tunnelling diodes
Authors
Issue Date1994
PublisherThe Institution of Engineering and Technology. The Journal's web site is located at http://www.ieedl.org/EL
Citation
Electronics Letters, 1994, v. 30 n. 1, p. 90-92 How to Cite?
AbstractA state holding circuit, similar to the Muller C-element used as a latch, a register or a counter, has been successfully fabricated using GaAs/AlGaAs heterostructures grown by molecular beam epitaxy (MBE). Using the negative resistance in a resonant tunnel diode, the circuit has a simpler configuration than the C-element and a potential for use in high speed circuits.
Persistent Identifierhttp://hdl.handle.net/10722/155013
ISSN
2015 Impact Factor: 0.854
2015 SCImago Journal Rankings: 0.549
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorYang, YFen_US
dc.contributor.authorWang, WIen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:31:30Z-
dc.date.available2012-08-08T08:31:30Z-
dc.date.issued1994en_US
dc.identifier.citationElectronics Letters, 1994, v. 30 n. 1, p. 90-92en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://hdl.handle.net/10722/155013-
dc.description.abstractA state holding circuit, similar to the Muller C-element used as a latch, a register or a counter, has been successfully fabricated using GaAs/AlGaAs heterostructures grown by molecular beam epitaxy (MBE). Using the negative resistance in a resonant tunnel diode, the circuit has a simpler configuration than the C-element and a potential for use in high speed circuits.en_US
dc.languageengen_US
dc.publisherThe Institution of Engineering and Technology. The Journal's web site is located at http://www.ieedl.org/ELen_US
dc.relation.ispartofElectronics Lettersen_US
dc.titleState holding circuit using heterojunction bipolar transistors and resonant tunnelling diodesen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1049/el:19940008en_US
dc.identifier.scopuseid_2-s2.0-0028766208en_US
dc.identifier.volume30en_US
dc.identifier.issue1en_US
dc.identifier.spage90en_US
dc.identifier.epage92en_US
dc.identifier.isiWOS:A1994MT57700063-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridYang, YF=7409383278en_US
dc.identifier.scopusauthoridWang, WI=7501757397en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats