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Article: Surface recombination current in InGaP/GaAs heterostructure-emitter bipolar transistors

TitleSurface recombination current in InGaP/GaAs heterostructure-emitter bipolar transistors
Authors
Yang, YFHsu, CCYang, ES
Issue Date1994
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
Ieee Transactions On Electron Devices, 1994, v. 41 n. 5, p. 643-647 How to Cite?
DOI: http://dx.doi.org/10.1109/16.285010
AbstractThe behavior of the surface recombination current was examined in InGaP/GaAs heterostructure-emitter bipolar transistors (HEBT's) with both exposed GaAs surface and InGaP passivated surface based on the emitter-size effect on current gain. The results indicate that the GaAs surface recombination current has a 1 kT-like dependence in the high current regime and a 2 kT-like dependence in the low current regime which is similar to published experimental results in AlGaAs/GaAs and InGaP/GaAs HBT's. The surface recombination current in devices with an InGaP passivation layer has an order of magnitude lower value in low current regime and more than two orders lower in high current regime than that in devices with exposed GaAs surface.
Persistent Identifierhttp://hdl.handle.net/10722/155000
ISSN
0018-9383
2021 Impact Factor: 3.221
2020 SCImago Journal Rankings: 0.828
ISI Accession Number ID
WOS:A1994NN18500003

 

DC FieldValueLanguage
dc.contributor.authorYang, YFen_US
dc.contributor.authorHsu, CCen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:31:27Z-
dc.date.available2012-08-08T08:31:27Z-
dc.date.issued1994en_US
dc.identifier.citationIeee Transactions On Electron Devices, 1994, v. 41 n. 5, p. 643-647en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://hdl.handle.net/10722/155000-
dc.description.abstractThe behavior of the surface recombination current was examined in InGaP/GaAs heterostructure-emitter bipolar transistors (HEBT's) with both exposed GaAs surface and InGaP passivated surface based on the emitter-size effect on current gain. The results indicate that the GaAs surface recombination current has a 1 kT-like dependence in the high current regime and a 2 kT-like dependence in the low current regime which is similar to published experimental results in AlGaAs/GaAs and InGaP/GaAs HBT's. The surface recombination current in devices with an InGaP passivation layer has an order of magnitude lower value in low current regime and more than two orders lower in high current regime than that in devices with exposed GaAs surface.en_US
dc.languageengen_US
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16en_US
dc.relation.ispartofIEEE Transactions on Electron Devicesen_US
dc.titleSurface recombination current in InGaP/GaAs heterostructure-emitter bipolar transistorsen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/16.285010en_US
dc.identifier.scopuseid_2-s2.0-0028427982en_US
dc.identifier.volume41en_US
dc.identifier.issue5en_US
dc.identifier.spage643en_US
dc.identifier.epage647en_US
dc.identifier.isiWOS:A1994NN18500003-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridYang, YF=7409383278en_US
dc.identifier.scopusauthoridHsu, CC=7404947020en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.issnl0018-9383-

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