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Article: Thermal effect on current gains of an AlGaAs/GaAs heterostructure-emitter bipolar transistor

TitleThermal effect on current gains of an AlGaAs/GaAs heterostructure-emitter bipolar transistor
Authors
KeywordsPhysics engineering
Issue Date1999
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1999, v. 74 n. 12, p. 1725-1727 How to Cite?
AbstractThe temperature dependence of current gain was investigated for AlGaAs/GaAs heterostructure-emitter bipolar transistors (HEBT). The current gain of the HEBT was found much less sensitive to temperature variation than that of a heterojunction bipolar transistor. In particular, the HEBT current gain was more or less constant with increasing temperature at the high current regime, indicating great potentials for power applications.
Persistent Identifierhttp://hdl.handle.net/10722/42106
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLo, HBen_HK
dc.contributor.authorYang, ESen_HK
dc.contributor.authorYang, YFen_HK
dc.date.accessioned2007-01-08T02:29:07Z-
dc.date.available2007-01-08T02:29:07Z-
dc.date.issued1999en_HK
dc.identifier.citationApplied Physics Letters, 1999, v. 74 n. 12, p. 1725-1727en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42106-
dc.description.abstractThe temperature dependence of current gain was investigated for AlGaAs/GaAs heterostructure-emitter bipolar transistors (HEBT). The current gain of the HEBT was found much less sensitive to temperature variation than that of a heterojunction bipolar transistor. In particular, the HEBT current gain was more or less constant with increasing temperature at the high current regime, indicating great potentials for power applications.en_HK
dc.format.extent67210 bytes-
dc.format.extent2607 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_HK
dc.subjectPhysics engineeringen_HK
dc.titleThermal effect on current gains of an AlGaAs/GaAs heterostructure-emitter bipolar transistoren_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=74&issue=12&spage=1725&epage=1727&date=1999&atitle=Thermal+effect+on+current+gains+of+an+AlGaAs/GaAs+heterostructure-emitter+bipolar+transistoren_HK
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_HK
dc.identifier.authorityYang, ES=rp00199en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.123668en_HK
dc.identifier.scopuseid_2-s2.0-0032621272en_HK
dc.identifier.hkuros44580-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0032621272&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume74en_HK
dc.identifier.issue12en_HK
dc.identifier.spage1725en_HK
dc.identifier.epage1727en_HK
dc.identifier.isiWOS:000079405800028-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLo, HB=7202085394en_HK
dc.identifier.scopusauthoridYang, ES=7202021229en_HK
dc.identifier.scopusauthoridYang, YF=7409383278en_HK

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