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Article: SiGe pMOSFET's with gate oxide fabricated by microwave electron cyclotron resonance plasma processing

TitleSiGe pMOSFET's with gate oxide fabricated by microwave electron cyclotron resonance plasma processing
Authors
Issue Date1994
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55
Citation
Ieee Electron Device Letters, 1994, v. 15 n. 10, p. 402-405 How to Cite?
AbstractA new process, electron cyclotron resonance (ECR) microwave plasma oxidation, has been developed to produce a gate-quality oxide directly on SiGe alloys. One μm Al gate Si 0.86Ge 0.15 p-metal-oxide-semiconductor field-effect-transistors (pMOSFET's) with ECR-grown gate oxide have been fabricated. It is found that saturation transconductance increases from 48 mS/mm at 300 K to 60 mS/mm at 77 K. Low field hole mobilities of 167 cm 2/V-s at 300 K and 530 cm 2/V-s at 77 K have been obtained.
Persistent Identifierhttp://hdl.handle.net/10722/155010
ISSN
2015 Impact Factor: 2.528
2015 SCImago Journal Rankings: 1.791
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLi, PWen_US
dc.contributor.authorYang, ESen_US
dc.contributor.authorYang, YFen_US
dc.contributor.authorChu, JOen_US
dc.contributor.authorMeyerson, BSen_US
dc.date.accessioned2012-08-08T08:31:30Z-
dc.date.available2012-08-08T08:31:30Z-
dc.date.issued1994en_US
dc.identifier.citationIeee Electron Device Letters, 1994, v. 15 n. 10, p. 402-405en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://hdl.handle.net/10722/155010-
dc.description.abstractA new process, electron cyclotron resonance (ECR) microwave plasma oxidation, has been developed to produce a gate-quality oxide directly on SiGe alloys. One μm Al gate Si 0.86Ge 0.15 p-metal-oxide-semiconductor field-effect-transistors (pMOSFET's) with ECR-grown gate oxide have been fabricated. It is found that saturation transconductance increases from 48 mS/mm at 300 K to 60 mS/mm at 77 K. Low field hole mobilities of 167 cm 2/V-s at 300 K and 530 cm 2/V-s at 77 K have been obtained.en_US
dc.languageengen_US
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55en_US
dc.relation.ispartofIEEE Electron Device Lettersen_US
dc.titleSiGe pMOSFET's with gate oxide fabricated by microwave electron cyclotron resonance plasma processingen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/55.320982en_US
dc.identifier.scopuseid_2-s2.0-0028530427en_US
dc.identifier.volume15en_US
dc.identifier.issue10en_US
dc.identifier.spage402en_US
dc.identifier.epage405en_US
dc.identifier.isiWOS:A1994PL26900011-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridLi, PW=7404773352en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridYang, YF=7409383278en_US
dc.identifier.scopusauthoridChu, JO=7402881146en_US
dc.identifier.scopusauthoridMeyerson, BS=7103196184en_US

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